Nitride Semiconductor Device With Local Crystallinity Control
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Solution Overview
Problem
Current semiconductor devices using nitride semiconductors face challenges in achieving high mobility and stable operation while maintaining high breakdown voltage and preventing current collapse, which are not adequately addressed by existing technologies.
Innovation Solution
The semiconductor device incorporates a layered structure with varying crystallinity in nitride regions, where the third nitride region has higher crystallinity than the first and second nitride regions, and an insulating layer structure to enhance mobility and breakdown voltage, and suppress current collapse, achieved through specific composition ratios and layer formation processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If a nitride semiconductor structure is used to achieve high breakdown voltage, then breakdown voltage is improved, but mobility and electrical stability deteriorate due to current collapse
Solution Approach 1:
The patent applies local quality by creating distinct nitride regions with different crystallinities at different locations within the semiconductor structure. Specifically, a first nitride region with first crystallinity, a second nitride region with second crystallinity, and a third nitride region with third crystallinity are formed, where the crystallinity varies locally to optimize different functional requirements: high breakdown voltage in some regions and high mobility/stability in others
Solution Approach 2:
The patent employs composite materials by combining nitride semiconductor layers with different crystalline structures (amorphous, microcrystalline, and crystalline phases) within a single device architecture. This composite approach allows the device to simultaneously achieve high breakdown voltage from certain nitride regions and high mobility with suppressed current collapse from other regions with different crystallinity
2Speed
If nitride semiconductor layers are used to improve mobility, then mobility is improved, but breakdown voltage and current collapse prevention are not adequately achieved
Solution Approach 1:
The patent applies local quality by creating distinct nitride regions with different crystallinities at different locations within the semiconductor structure. Specifically, a first nitride region with first crystallinity, a second nitride region with second crystallinity, and a third nitride region with third crystallinity are formed, where the crystallinity varies locally to optimize different functional requirements: high breakdown voltage in some regions and high mobility/stability in others
Solution Approach 2:
The patent employs composite materials by combining nitride semiconductor layers with different crystalline structures (amorphous, microcrystalline, and crystalline phases) within a single device architecture. This composite approach allows the device to simultaneously achieve high breakdown voltage from certain nitride regions and high mobility with suppressed current collapse from other regions with different crystallinity
Data Source
AI summary
According to one embodiment, a semiconductor device includes first to third electrodes, first to third layers, and a first insulating layer. The first layer includes first to fifth partial regions. The first partial region is between the fourth and third partial regions. The second partial region is between the third and fifth partial regions. The first insulating layer includes first and second inter-layer regions. The second layer includes first and second intermediate regions. The first intermediate region is provided between the first partial region and the first inter-layer region. The second intermediate region is provided between the second partial region and the second inter-layer region. The third layer includes first to third nitride regions. The first inter-layer region is between the first intermediate region and the first nitride region. The second inter-layer region is between the second intermediate region and the second nitride region.