Nitride Semiconductor Light-Emitting Element With Current Blocking Part
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Solution Overview
Problem
Nitride semiconductor light emitting devices face challenges in achieving uniform current spreading as the device area increases, leading to increased leakage current between the n-type nitride semiconductor layer and the buffer layer, which results in low current density and deterioration of internal quantum efficiency.
Innovation Solution
Incorporating a current blocking part with an insulating material, such as an oxide layer or an Al-containing nitride layer, between the substrate and the n-type nitride layer to prevent current leakage, allowing current to flow only through the activation layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If the area of the nitride semiconductor light emitting device is increased, then the light output capacity is improved, but the current spreading uniformity deteriorates and leakage current increases
Solution Approach 1:
The invention introduces a current blocking part that divides the device into distinct current flow regions. By segmenting the current path through the n-type nitride layer, the current is forced to spread uniformly across the activation layer rather than concentrating in specific areas, thus maintaining current spreading uniformity even in larger devices
Solution Approach 2:
The current blocking part acts as an intermediary element between the n-type nitride layer and the buffer layer. This intermediary structure controls and regulates current flow, preventing direct leakage paths while ensuring uniform current distribution across the enlarged device area
2Area of stationary object
If the device area is increased, then the light output capacity is improved, but leakage current increases between the n-type nitride semiconductor layer and the buffer layer
Solution Approach 1:
The invention extracts or removes the leakage current paths by introducing the current blocking part. This blocking structure actively takes out the harmful leakage current between the n-type nitride layer and buffer layer, preventing it from flowing while allowing the device area to increase for higher light output
Solution Approach 2:
The current blocking part serves as an intermediary barrier that blocks harmful leakage current while maintaining the electrical connection needed for light emission. It mediates between the need for large device area and the need to prevent leakage current
3Device complexity
If leakage current is not blocked, then the device structure remains simple, but current density in the activation layer decreases and internal quantum efficiency deteriorates
Solution Approach 1:
The current blocking part is introduced as a preliminary structure during device fabrication. By pre-establishing the current blocking function before final device operation, the structure ensures proper current density distribution in the activation layer, maintaining internal quantum efficiency without requiring complex post-processing
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The current blocking part effectively blocks current from leaking to the buffer layer and substrate, improving light emitting efficiency by ensuring current flows only within the activation layer, thereby enhancing internal quantum efficiency.
Implementation Method 1
the current blocking part includes an insulating material
Data Source
AI summary
Disclosed are a nitride semiconductor light-emitting element and a method for manufacturing the same. The nitride semiconductor light-emitting element according to the present invention comprises: a current blocking part disposed between a substrate and an n-type nitride layer; an activation layer disposed on the top surface of the n-type nitride layer; and a p-type nitride layer disposed on the top surface of the activation layer, wherein the current blocking part is an AlxGa(1-x)N layer, and the Al content x times layer thickness (μm) is in the range of 0.01-0.06. Accordingly, the nitride semiconductor light-emitting element can increase the luminous efficiency by having a current blocking part which prevents current leakage from occurring.