Nitride Semiconductor Structure for High Mobility Current Control
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Solution Overview
Problem
Current semiconductor devices using nitride semiconductors face challenges in improving characteristics such as carrier mobility and threshold voltage, with existing designs struggling to effectively control current and achieve high mobility and low on-resistance.
Innovation Solution
The semiconductor device incorporates a nitride member with alternating layers of AlN and InGaN films, strategically positioned between the semiconductor member and insulating regions, creating a dipole that suppresses carrier scattering and facilitates high mobility, while the gate electrode is recess-type, allowing for precise control of current between the source and drain electrodes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If conventional nitride semiconductor structures are used, then device simplicity is maintained, but carrier mobility is insufficient and on-resistance is high
Solution Approach 1:
The device is segmented into distinct functional regions: a drift region with alternating AlN/InGaN layers for high mobility transport, a barrier region for carrier confinement, and a gate region for control. This segmentation allows each region to be optimized independently for its specific function, achieving high carrier mobility in the drift region while maintaining overall device performance
Solution Approach 2:
The patent employs composite material structures, specifically alternating layers of AlN (high bandgap, high breakdown field) and InGaN (high electron mobility) in the drift region. This composite structure combines the advantageous properties of different nitride semiconductor materials to achieve both high carrier mobility and high breakdown voltage, while the combination of AlN barrier layers and InGaN channels creates a composite structure that enables precise electrical control
2Measurement precision
If conventional electrode configurations are used, then manufacturing is simpler, but current control precision is insufficient
Solution Approach 1:
The gate electrode is configured as a recess-type structure that extends into the semiconductor layer, creating a dynamic electric field distribution that can be precisely controlled through gate voltage application. This recess configuration allows the electric field to be concentrated where needed for precise current control while the third electrode provides additional degrees of freedom for field shaping and optimization
Solution Approach 2:
The third electrode acts as an intermediary element between the gate electrode and the drift region, providing additional control over the electric field distribution. This intermediate electrode enables fine-tuning of the field profile to optimize current control precision without requiring direct modification of the gate electrode structure itself
3Speed
If simple insulating structures are used, then device complexity is reduced, but carrier scattering is not effectively suppressed
Solution Approach 1:
The insulating structure employs composite materials including AlN barrier layers combined with insulating films (such as silicon oxide, silicon nitride, or aluminum oxide). This composite approach provides effective carrier scattering suppression through the high breakdown field and wide bandgap of AlN, while the additional insulating films provide enhanced electrical isolation and field control
Solution Approach 2:
The insulating structures are strategically positioned at specific locations where carrier scattering is most problematic: AlN barrier layers are placed at the interfaces between the drift region and other regions, and insulating films are applied in areas requiring enhanced electrical isolation. This localized application of insulating materials provides scattering suppression exactly where needed without unnecessarily increasing overall device complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the semiconductor device's characteristics by achieving high electron mobility, low on-resistance, and stable operation, improving overall device performance.
Implementation Method 1
incorporates a nitride member with alternating layers of AlN and InGaN films, strategically positioned between the semiconductor member and insulating regions, creating a dipole that suppresses carrier scattering
Implementation Method 2
creating a dipole that suppresses carrier scattering and facilitates high mobility
Implementation Method 3
the gate electrode is recess-type, allowing for precise control of current between the source and drain electrodes
Data Source
AI summary
According to one embodiment, a semiconductor device includes first to third electrodes, a semiconductor member, a first insulating member, and a nitride member. The third electrode includes a first electrode portion. The first electrode portion is between the first and second electrodes. The semiconductor member includes first and second semiconductor regions. The first semiconductor region includes first to fifth partial regions. The second semiconductor region includes first and second semiconductor portions. The first semiconductor portion is electrically connected with the first electrode. The second semiconductor portion is electrically connected with the second electrode. The first insulating member includes a first insulating region. The first insulating region is between the third partial region and the first electrode portion. The nitride member includes a first nitride region. The first nitride region is between the third partial region and the first insulating region, and includes first nitride portions and second nitride portions.