Nitride Semiconductor Die with Segmented Quantum Wells for Long Wavelength Emission
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Solution Overview
Problem
Conventional LEDs face efficiency issues in emitting long wavelength light due to lattice mismatch in InGaN layers, leading to reduced light emission efficiency and increased crystal defects.
Innovation Solution
The use of nano-sized light emission structures with semi-polar surfaces and multi-layer structures on a nitride semiconductor layer, arranged with specific gaps to emit multiple wavelengths of light without fluorescent materials, allowing for increased indium content and reduced piezoelectric polarization.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If the indium content in the InGaN layer is increased to emit longer wavelength light, then the light emission wavelength increases, but the lattice mismatch between the InGaN layer and base substrate increases, resulting in reduced light emission efficiency and increased crystal defects
Solution Approach 1:
The patent divides the InGaN light emitting layer into multiple quantum well layers with different indium compositions. Each quantum well layer is designed with optimized indium content to reduce lattice mismatch while collectively achieving the desired long wavelength emission through quantum confinement effects.
Solution Approach 2:
The patent employs a composite structure combining InGaN quantum well layers with GaN barrier layers. This composite material approach allows the system to leverage the bandgap properties of different materials to achieve long wavelength emission while maintaining structural stability and reducing crystal defects through the lattice-matched GaN barriers.
2Temperature
If the indium content in the InGaN layer is increased to emit longer wavelength light, then the light emission wavelength increases, but crystal defects increase due to lattice mismatch
Solution Approach 1:
The InGaN layer is segmented into multiple thin quantum well layers separated by GaN barrier layers. This segmentation reduces the thickness of each individual InGaN layer, thereby reducing the cumulative lattice mismatch and preventing the formation of misfit dislocations that would otherwise occur in thicker, high-indium-content layers.
Solution Approach 2:
The patent changes the structural parameters of the InGaN layer by creating a multi-quantum well configuration with controlled well widths and barrier thicknesses. This parameter optimization allows the system to maintain high indium content for long wavelength emission while keeping each quantum well thin enough to avoid excessive lattice mismatch and crystal defect formation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances light emission efficiency of long wavelengths, reduces crystal defects, and enables the generation of white light in a single chip without fluorescent materials, improving illumination performance and color temperature consistency.
Implementation Method 1
at least one first region configured to emit light having at least a first wavelength... The at least one second region is configured to emit light having at least a second wavelength
Data Source
AI summary
A semiconductor die includes at least one first region and at least one second region. The at least one first region is configured to emit light having at least a first wavelength. The at least one second region is configured to emit light having at least a second wavelength, which is different from the first wavelength.