Nitride Semiconductor Dislocation Control via Hollow Core-Shell Calcination
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Solution Overview
Problem
Current methods for manufacturing nitride semiconductor devices on hetero-substrates with different lattice constants and thermal expansion coefficients result in high defect densities and reduced reliability due to complex processes involving mask layers and dry etching, which lead to defects and reduced efficiency.
Innovation Solution
A method involving the formation of hollow nitride structures on a substrate using core-shell structures, where the core parts are removed through calcination and the shell parts are nitrified to form a dislocation control layer, reducing defect density and enhancing external quantum efficiency without the need for mask layers or dry etching.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional methods using mask layers and dry etching are used to manufacture nitride semiconductor devices on hetero-substrates, then device fabrication can be achieved, but defect density increases and reliability decreases due to dislocation generation from lattice constant and thermal expansion coefficient differences
Solution Approach 1:
The patent introduces a buffer layer as an intermediary between the hetero-substrate and the nitride semiconductor layer. This buffer layer mediates the lattice mismatch and thermal expansion differences, reducing dislocation generation and improving both device reliability and manufacturing precision without requiring complex mask layers and dry etching processes
Solution Approach 2:
The patent modifies the substrate surface properties by making it hydrophilic through surface treatment. This parameter change in surface wettability improves the uniformity of buffer layer formation and reduces defects, thereby enhancing manufacturing precision and device reliability while simplifying the fabrication process
2Productivity
If complex processes involving mask layers and dry etching are used, then nitride semiconductor devices can be manufactured on hetero-substrates, but the manufacturing process complexity increases and efficiency decreases
Solution Approach 1:
The patent extracts and eliminates the complex mask layers and dry etching steps from the manufacturing process. By using a buffer layer approach, the invention removes unnecessary process complexity while maintaining the ability to manufacture nitride semiconductor devices on hetero-substrates, thereby improving manufacturing efficiency
Solution Approach 2:
The patent segments the manufacturing process into simpler, more manageable steps: substrate preparation with hydrophilic treatment, buffer layer formation, and nitride semiconductor layer growth. This segmentation eliminates the need for complex mask and etch processes, reducing overall process complexity and improving productivity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively controls dislocation generation and reduces defect density, increases external quantum efficiency, and stabilizes the nitride semiconductor layer, improving the reliability and efficiency of the device.
Implementation Method 1
The core parts of the core-shell structures may be carbon nanospheres formed by a hydrothermal method. The core-shell structures may be calcined to remove the core parts from the core-shell structures. The calcination of the core-shell structures may be performed at a temperature between about 200° C. and about 700° C.
Implementation Method 2
removing core parts from the dispersed plurality of core-shell structures and nitrifying shell parts to form a plurality of hollow structures including a nitride
Implementation Method 3
evaporating a solvent from the solution including the plurality of core-shell structures to disperse the plurality of core-shell structures on the substrate
Implementation Method 4
The substrate may be processed so that at least a part of a surface of the substrate may is hydrophilic
Data Source
AI summary
A nitride semiconductor device may include a substrate, a dislocation control layer formed on the substrate and including a plurality of hollow structures including a nitride, and a nitride semiconductor layer formed on the dislocation control layer.