Nitride Semiconductor Light Emitting Element Electrode Structure
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Solution Overview
Problem
Nitride semiconductor light emitting elements face light leakage issues from regions without electrodes, leading to reduced emission output and increased power consumption, and existing manufacturing processes are complex.
Innovation Solution
A nitride semiconductor light emitting element with a laminated electrode structure that includes a conductive region and an insulated region, where the insulated region is formed by oxidizing a metal layer, preventing light leakage and allowing for efficient reflection, and a method for manufacturing this element that involves forming a laminate of semiconductor layers and patterning metal layers to create the insulated region.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If highly reflective material is used for electrodes to improve light reflection efficiency, then light emission brightness is improved, but light leakage from non-electrode regions increases and power consumption increases
Solution Approach 1:
The patent applies local quality by creating different functional regions within the electrode structure: a reflective region with highly reflective material for light reflection, and an insulating region with oxide material for light blocking. This local differentiation allows each region to perform its specific function optimally, preventing light leakage while maintaining reflection efficiency.
Solution Approach 2:
The electrode is segmented into multiple functional zones: the reflective region, the insulating region, and the light blocking layer. This segmentation allows independent optimization of each region's properties to address both light reflection and light leakage prevention requirements.
2Reliability
If metal film is formed to cover highly reflective material to prevent migration, then electrode reliability is improved, but light reflection efficiency decreases due to reduced reflective surface area
Solution Approach 1:
The light blocking layer is applied selectively only in the insulating region where migration prevention is needed, rather than covering the entire electrode surface. This localized approach maintains the reflective properties of the reflective region while providing migration prevention where required.
3Loss of energy
If complicated manufacturing process is used to form oxide region and metal region separately, then light leakage prevention is improved, but manufacturing complexity increases
Solution Approach 1:
The patent combines the formation of the insulating region and the light blocking layer into a single integrated structure. The oxide layer serves dual purposes as both the insulating region for light blocking and the base for the light blocking layer, simplifying the manufacturing process while maintaining effective light leakage prevention.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively prevents light leakage, reduces power consumption, and enhances emission efficiency while simplifying the manufacturing process.
Implementation Method 1
an insulated region formed by oxidizing a metal layer
Data Source
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AI summary
A nitride semiconductor light emitting element has; a laminate of a first conduction type semiconductor layer, a light emitting layer and a second conduction type semiconductor layer of a different conduction type from that of the first conduction type semiconductor layer; and electrodes with a laminate structure formed on the first conduction type semiconductor layer, the electrodes including a conductive region of a first layer which has the conductive region and an insulated region.