Vertical Nitride Semiconductor Device Flange Heat Dissipation
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Solution Overview
Problem
Existing vertical nitride semiconductor devices face challenges in heat radiation and adhesion between the package and conductive substrate, limiting their efficiency and output due to the entire surface bonding and complex manufacturing processes.
Innovation Solution
A vertical nitride semiconductor device design featuring a conductive substrate with a flange part extending from its side surface, allowing for increased heat radiation area and improved adhesion, along with a method involving bonding, substrate removal, electrode and metal layer formation, and cutting to create a larger heat radiation area and enhance adhesion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If the entire surface of the conductive substrate and semiconductor layer are bonded together, then the bonding area is maximized, but the heat radiation area at the bottom surface of the conductive substrate becomes insufficient
Solution Approach 1:
The conductive substrate is segmented into two distinct functional areas: a bonding area for attaching the semiconductor layer and a heat radiation area for dissipating heat. This segmentation allows the substrate to simultaneously fulfill both bonding and heat radiation functions without compromise.
Solution Approach 2:
Different regions of the conductive substrate are assigned different functional qualities: the bonding area is optimized for adhesion strength while the heat radiation area is optimized for thermal dissipation. This local differentiation resolves the contradiction by allowing each region to excel at its specific function.
2Ease of manufacture
If the principal surfaces of the multi-layered metal layer and semiconductor layer are made smaller than the pattern surface, then the manufacturing complexity is reduced, but the light-emitting area becomes small
Solution Approach 1:
The invention extends the light-emitting functionality into the vertical dimension by forming light-emitting portions on the side surfaces of the semiconductor layer. This allows the light-emitting area to be increased without requiring larger principal surfaces, thereby maintaining ease of manufacture while expanding the functional area.
3Temperature
If a flange part is added to the conductive substrate to increase heat radiation area, then heat radiation is improved, but the manufacturing process becomes more complex
Solution Approach 1:
The heat radiation area is merged with the bottom surface of the existing conductive substrate rather than being implemented as a separate flange structure. This integration achieves enhanced heat radiation functionality without adding the manufacturing complexity of a distinct flange part.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design effectively improves heat radiation and adhesion, enabling higher efficiency and output while simplifying the manufacturing process by increasing the heat radiation area and enhancing the package-substrate interface.
Implementation Method 1
a bonding layer formed between the conductive substrate and the second electrode and made of an electrode material or a conductive material
Implementation Method 2
the area of the bottom surface of the conductive substrate on the side of a package becomes larger than that of the bonding area of the semiconductor layer... it is possible to sufficiently radiate heat generated from the semiconductor layer at the bottom surface of the conductive substrate
Data Source
AI summary
Disclosed is a vertical nitride semiconductor device including a conductive substrate; a semiconductor layer bonded to the conductive substrate via a second electrode; a metal layer formed on the conductive substrate; a first electrode formed on the semiconductor layer; and a bonding layer formed between the conductive substrate and the second electrode. The conductive substrate has a flange part, which extends from a side surface of the conductive substrate, on a side of the other front surface thereof. The flange part is formed in a manner in which the conductive substrate and the semiconductor layer are bonded together and then a remaining part of the conductive substrate is divided, the remaining part being formed by cutting off the semiconductor layer and part of the conductive substrate in a thickness direction so as to expose a side surface of the semiconductor layer and the side surface of the conductive substrate.