Nitride Semiconductor Device High-Speed Switching
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Solution Overview
Problem
High-speed switching semiconductor devices require high-performance driving circuits, but existing circuits often fail to deliver low output impedance and high-speed operation due to high wiring inductance and gate signal speed limitations.
Innovation Solution
A nitride semiconductor device configuration featuring n-type channel transistors with a heterostructure of GaN and AlGaN layers, along with a resistor and specific transistor connections, allows for high-speed switching without the need for a p-type channel transistor, reducing the demand on the driving circuit and minimizing the influence of wiring inductance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If conventional driving circuits are used to drive high-speed switching elements, then the circuit complexity increases, but the output impedance remains high and high-speed operation cannot be achieved
Solution Approach 1:
The patent extracts the gate driving function from external driving circuits and integrates it directly into the semiconductor device by forming driving transistors (second to fifth transistors) within the device structure. This eliminates the need for complex external driving circuits while achieving high-speed operation through internal signal generation and transmission.
Solution Approach 2:
The patent merges the driving circuit functionality with the main switching element by integrating multiple transistors and resistors into a unified structure. The driving transistors are formed in the same semiconductor layer structure as the main transistor, combining what were previously separate components into a single integrated device that achieves both high-speed operation and low output impedance.
2Object-affected harmful factors
If high-performance driving circuits are designed to achieve low output impedance, then the wiring inductance increases, but high-speed operation cannot be achieved
Solution Approach 1:
The patent transitions from planar wiring connections to vertical three-dimensional connections by forming transistor stacks where source, drain, and gate regions are vertically aligned. This vertical arrangement dramatically reduces the horizontal wiring length and associated inductance, enabling high-speed operation without the harmful effects of wiring inductance that plague conventional planar designs.
Solution Approach 2:
The patent introduces intermediate conductive structures (such as conductive types regions and stacked transistor configurations) that act as mediators between the control signal source and the main switching element. These intermediaries provide low-inductance signal paths that bypass the problematic wiring inductance while maintaining signal integrity and enabling high-speed gate control.
3Object-affected harmful factors
If larger transistor areas are used to reduce output impedance, then the device area increases, but cost-effectiveness decreases
Solution Approach 1:
The patent employs composite material structures with alternating high-dielectric constant and low-dielectric constant layers in the insulating film stack. This composite approach enables higher transistor density and more efficient space utilization, allowing low output impedance to be achieved with smaller device areas through improved electrical characteristics rather than simply increasing physical size.
Solution Approach 2:
The patent utilizes vertical stacking of multiple transistor layers to achieve low output impedance without increasing the planar footprint. By arranging transistors in the vertical dimension rather than spreading them out horizontally, the design achieves the required electrical performance while minimizing the occupied area, resulting in cost-effective high-performance devices.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables high-speed switching with reduced output impedance and lower electric power requirements, achieving efficient operation even with high wiring inductance, and allows for smaller, more cost-effective transistor areas without compromising performance.
Implementation Method 1
a HEMT (High Electron Mobility Transistor) having an AlGaN/GaN heterostructure has high electron mobility and carrier density
Implementation Method 2
an electron induction layer having an AlGaN material and a carrier running layer having a GaN material, the AlGaN layer being disposed on the GaN layer
Data Source
AI summary
According to one embodiment, a nitride semiconductor device includes a first, a second, a third and a fourth transistor of n-type channel and a resistor. The first transistor has a first gate, a first source, and a first drain. The second transistor has a second gate, a second source electrically connected to the first gate, and a second drain. The third transistor has a third gate, a third source electrically connected to the first source, and a third drain electrically connected to the first gate and the second source. The fourth transistor has a fourth gate electrically connected to the third gate, a fourth source electrically connected to the first source and the third source, and a fourth drain electrically connected to the second gate. The resistor has one end electrically connected to the second drain and one other end electrically connected to the second gate and the fourth drain.