Nitride Semiconductor Light-Emitting Device With Groove Light Guide
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Solution Overview
Problem
Nitride semiconductor light-emitting devices face issues with current crowding, leading to non-uniform current distribution, increased forward voltage, and electrostatic discharge, as well as reduced light extraction efficiency due to total reflection and light absorption.
Innovation Solution
A semiconductor light-emitting device with a groove in the P-type nitride semiconductor layer and a light guide made of transparent non-conductive material is used to prevent total reflection and improve current distribution, featuring a V-shaped or polygon-shaped groove and a dual-layered light guide structure to enhance light extraction efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the number of electrode fingers is increased to achieve uniform current distribution, then current distribution is improved, but light-emitting area is decreased
Solution Approach 1:
The invention introduces a vertical dimension by forming grooves in the P-type nitride semiconductor layer, transforming the flat two-dimensional electrode structure into a three-dimensional structure with light guides extending into the groove depth, thereby achieving both uniform current distribution and preserved light-emitting area
Solution Approach 2:
Light guides made of transparent non-conductive material are introduced as intermediary elements that simultaneously manage current distribution and light extraction, acting as mediators between the electrical and optical functions without requiring additional electrode fingers
2Ease of manufacture
If conventional flat structure is used, then manufacturing is simple, but light extraction efficiency is reduced due to total reflection
Solution Approach 1:
The invention introduces curved surfaces by forming V-shaped or polygonal grooves with inclined sides, replacing the flat horizontal interface with angled surfaces that redirect light paths and reduce total internal reflection, thereby improving light extraction efficiency while maintaining manufacturing feasibility
Solution Approach 2:
The flat two-dimensional structure is transformed into a three-dimensional structure with grooves having specific depths and angles, adding vertical dimension to the light extraction interface, which enables better light outcoupling without significantly complicating the manufacturing process
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively prevents current crowding, reduces forward voltage, and enhances light extraction efficiency by uniformly distributing current and minimizing light reflection, thereby improving the overall performance of the semiconductor light-emitting device.
Implementation Method 1
the nitride semiconductor light-emitting device according to the related art has problems such as total reflection of light, and reduction of light extraction efficiency
Data Source
AI summary
A semiconductor light-emitting device capable of improving current distribution, and a method for manufacturing the same is disclosed, wherein the semiconductor light-emitting device comprises a substrate; an N-type nitride semiconductor layer on the substrate; an active layer on the N-type nitride semiconductor layer; a P-type nitride semiconductor layer on the active layer; a groove in the P-type nitride semiconductor layer to form a predetermined pattern in the P-type nitride semiconductor layer; a light guide of transparent non-conductive material in the groove; and a transparent electrode layer on the P-type nitride semiconductor layer with the light guide.