Nitride Semiconductor Groove Growth Prevention
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Solution Overview
Problem
Conventional nitride-based semiconductor growth methods, such as ELOG and Pendeo, face issues like dislocation due to lattice mismatch and thermal expansion differences, leading to defects and prolonged processing times, which affect the quality of light emitting devices.
Innovation Solution
A light emitting device with a first conductivity-type semiconductor layer featuring grooves and a growth prevention layer on the bottom and side surfaces, preventing nitride-based semiconductor growth on these areas, thereby reducing dislocation and improving crystallinity, and incorporating a void to enhance light extraction efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If ELOG method is used to prevent dislocation, then crystallinity is improved, but growth time is prolonged and tilt dislocation occurs due to friction between mask and GaN
Solution Approach 1:
The patent extracts and removes the problematic mask material (silicon oxide) that causes friction and tilt dislocation during ELOG growth. By eliminating the mask entirely and using alternative approaches, the method reduces growth time while maintaining crystallinity improvement.
Solution Approach 2:
The patent introduces an intermediary layer or structure that mediates between the substrate and the GaN layer, preventing direct friction contact that causes tilt dislocation. This intermediary approach allows for reduced growth time without sacrificing crystallinity.
2Manufacturing precision
If Pendeo growth method is used to prevent dislocation, then crystallinity is improved, but process time is lengthened due to substrate etching
Solution Approach 1:
The patent removes the substrate etching step entirely from the growth process. By eliminating the etching operation, process time is significantly reduced while alternative methods are employed to maintain the crystallinity benefits previously achieved through Pendeo growth.
Solution Approach 2:
Instead of etching the substrate to create growth patterns (Pendeo method), the patent inverts the approach by growing the semiconductor layer in a controlled manner that naturally forms the desired structure without prior substrate modification, thereby reducing process time.
3Manufacturing precision
If growth prevention layer is disposed on bottom surface and side surface of groove, then dislocation is reduced and crystallinity is improved, but device structure becomes more complex
Solution Approach 1:
The growth prevention layer serves multiple functions simultaneously: it prevents dislocation, controls semiconductor growth patterns, and can be integrated with existing device structures. This multi-functionality reduces the need for additional separate structures, thereby limiting the increase in device complexity.
Solution Approach 2:
The patent merges the growth prevention layer with the groove structure, combining what could be separate components into an integrated feature. This integration reduces overall structural complexity while maintaining the dislocation prevention and crystallinity improvement benefits.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces crystal defects and improves the quality of nitride-based semiconductors, enhancing light extraction efficiency by scattering light emitted from the active layer.
Implementation Method 1
a light emitting device including a first conductivity-type semiconductor layer including a first layer and a second layer, an active layer disposed on the first conductivity-type semiconductor layer
Implementation Method 2
incorporating a void to enhance light extraction efficiency. The solution effectively reduces crystal defects and improves the quality of nitride-based semiconductors, enhancing light extraction efficiency by scattering light emitted from the active layer
Data Source
AI summary
An embodiment provides a light emitting element comprising: a first conductive semiconductor layer including a first layer and a second layer; an active layer on the first conductive semiconductor layer; a second conductive semiconductor layer on the active layer; and a first electrode and a second electrode arranged on the first conductive semiconductor layer and the second conductive semiconductor layer, respectively, wherein the first layer includes a plurality of first grooves, and a growth prevention layer is arranged on the bottom surface and side surfaces of each of the first grooves.