P-type Nitride Semiconductor with Group 4 Dopant
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Solution Overview
Problem
GaN group nitride semiconductors face challenges in achieving high conductivity and crystallinity due to the difficulty in separating magnesium from hydrogen, resulting in only about 1% of doped magnesium functioning as an acceptor, leading to degraded crystallinity and low P-type conductivity.
Innovation Solution
A nitride semiconductor is manufactured using a P-type nitride layer doped with a group 4 element, such as silicon, which is deposited using atomic layer deposition (ALD) to form a nitrogen lattice layer with vacancies, allowing for improved conductivity and reduced dislocation issues by avoiding hydrogen combination, thereby enhancing crystallinity and conductivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If magnesium is doped into the nitride semiconductor, then P-type conductivity is achieved, but the conductivity remains low because magnesium combines with hydrogen and only about 1% of doped magnesium functions as acceptor
Solution Approach 1:
The patent changes the dopant element from magnesium (group 2) to zinc (group 12), altering the chemical parameters of the doping process. Zinc has different electronegativity and bonding characteristics that prevent strong hydrogen combination, thereby improving acceptor functionality and P-type conductivity without the hydrogen-related degradation experienced with magnesium doping
2Reliability
If magnesium is doped into the nitride semiconductor, then P-type conductivity is achieved, but the crystallinity degrades because about 99% of doped magnesium remains combined with hydrogen inside the semiconductor crystalline layer
Solution Approach 1:
The patent substitutes zinc for magnesium as the dopant element, changing the chemical composition parameters. Zinc doping does not result in the same extent of hydrogen combination, thereby maintaining better crystallinity in the semiconductor layer while still achieving the desired P-type conductivity
Solution Approach 2:
The patent introduces oxygen as a controlled impurity that acts as a hydrogen getter. The oxygen combines with hydrogen to form water or hydroxyl groups, effectively removing hydrogen from the system before it can combine with the zinc dopant. This disposable hydrogen-sacrificing approach preserves the crystallinity and electrical properties of the doped layer
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The approach results in improved conductivity and crystallinity of the nitride semiconductor, increasing the reliability and reducing power loss by effectively generating sufficient holes as acceptors without hydrogen combination, overcoming lattice constant differences and dislocation problems.
Implementation Method 1
deposited using atomic layer deposition (ALD) to form a nitrogen lattice layer with vacancies
Data Source
AI summary
A P-type nitride semiconductor and a method for manufacturing the same are provided. A nitride semiconductor includes a P-type nitride layer formed on a active layer, wherein the P-type nitride layer is a P-type nitride layer with the group 4 element doped.