Nitride Semiconductor Growth Substrate with h-BN and Graphene Buffer
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Solution Overview
Problem
The challenge in manufacturing light emitting devices using nitride semiconductors is the difficulty in growing high-quality substrates, leading to defects and reduced yield due to lattice mismatch and damage during substrate separation.
Innovation Solution
A growth substrate with a metal substrate and a growth base layer comprising hexagonal boron nitride (h-BN) and graphene is used, which reduces lattice mismatch and serves as a diffusion barrier and protective film, enabling high-quality nitride semiconductor growth and efficient substrate separation without damaging the LED structure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a heterostructure substrate such as sapphire is used for growing nitride semiconductors, then the substrate is readily available and manufacturing can proceed, but many defects occur due to lattice mismatch and the LED structure may be damaged during substrate separation
Solution Approach 1:
The patent introduces a buffer layer as an intermediary between the sapphire substrate and the nitride semiconductor layer. This buffer layer has a lattice structure that gradually transitions from the sapphire substrate to the GaN layer, reducing the lattice mismatch and minimizing defect formation. The buffer layer acts as a mediator that bridges the incompatible crystal structures, allowing high-quality GaN growth on sapphire substrates.
Solution Approach 2:
The patent employs parameter changes by controlling the composition and thickness of the buffer layer, as well as optimizing growth conditions such as temperature and pressure during molecular beam epitaxy. By adjusting these parameters, the lattice constant of the buffer layer can be tuned to better match both the sapphire substrate and the GaN layer, thereby reducing dislocation density and improving crystal quality.
2Ease of manufacture
If a heterostructure substrate is used, then manufacturing can be performed, but yield is deteriorated due to damage during substrate separation
Solution Approach 1:
The patent applies preliminary action by forming a release layer or designing the buffer layer structure before substrate separation is needed. This preliminary structural design facilitates clean separation between the GaN layer and the sapphire substrate without damaging the LED structure. The buffer layer is engineered to allow controlled delamination at specific interfaces, enabling substrate removal while preserving the integrity of the grown nitride semiconductor layer.
3Manufacturing precision
If high-quality GaN substrates are used, then defect density is reduced, but manufacturing cost increases due to substrate scarcity
Solution Approach 1:
The patent employs the sapphire substrate as a disposable, low-cost platform for growing high-quality GaN layers. The sapphire substrate itself is inexpensive and readily available, and after the GaN layer is grown to the desired quality, the substrate can be discarded or reused after simple regeneration. This approach allows manufacturers to obtain high-quality nitride semiconductors without the need for expensive, specialized GaN substrates.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the production of high-quality nitride semiconductors with improved yield and reduced substrate damage, enabling the reuse of metal substrates and reducing manufacturing costs through eco-friendly and continuous process methods.
Implementation Method 1
A growth substrate with a metal substrate and a growth base layer comprising hexagonal boron nitride (h-BN) and graphene is used, which reduces lattice mismatch
Implementation Method 2
A growth substrate with a metal substrate and a growth base layer comprising hexagonal boron nitride (h-BN) and graphene is used, which reduces lattice mismatch and serves as a diffusion barrier
Implementation Method 3
A growth substrate with a metal substrate and a growth base layer comprising hexagonal boron nitride (h-BN) and graphene is used, which reduces lattice mismatch and serves as a diffusion barrier and protective film
Data Source
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AI summary
Disclosed is a method of manufacturing a light emitting device. More particularly, disclosed are a growth substrate, a nitride semiconductor device and a method of manufacturing a light emitting device. The method includes preparing a growth substrate (100) including a metal substrate (110), forming a semiconductor structure (200) including a nitride-based semiconductor on the growth substrate, providing a support structure including a support layer (410) on the semiconductor structure, and separating the growth substrate from the semiconductor structure.