Nitride Semiconductor Heat Dissipation Recess
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Solution Overview
Problem
The existing nitride compound semiconductor devices with a multilayer buffer layer suffer from low heat dissipation capacity due to its low thermal conductivity, leading to increased channel resistance and reliability issues in semiconductor electronic devices.
Innovation Solution
Incorporating a recess in the nitride compound semiconductor structure that extends from the electron supply layer through the channel and multilayer buffer layer, filled with a heat dissipation layer having higher thermal conductivity than the multilayer buffer layer, to enhance heat dissipation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a multilayer buffer layer is used in the nitride compound semiconductor, then the crystal quality and stress distribution are improved, but the thermal conductivity is significantly reduced, leading to poor heat dissipation
Solution Approach 1:
The buffer layer is segmented into a multilayer structure with alternating high-Al composition layers and low-Al composition layers. This segmentation allows the high-Al layers to provide stress management and crystal quality improvement, while the low-Al layers maintain higher thermal conductivity, thus resolving the contradiction between crystal quality and heat dissipation.
Solution Approach 2:
Different regions of the buffer layer have different Al compositions tailored to their specific functions. The high-Al composition layers (e.g., Al0.7Ga0.3N) are positioned where stress control is critical, while low-Al composition layers (e.g., Al0.1Ga0.9N) are positioned where thermal conduction is prioritized. This local optimization resolves the contradiction by assigning different quality characteristics to different parts of the buffer layer.
2Reliability
If a multilayer buffer layer is used in the nitride compound semiconductor, then the device performance is enhanced, but the channel layer temperature increases during operation, affecting reliability
Solution Approach 1:
The low-Al composition layers act as thermal intermediaries between the channel layer and the substrate. These layers have higher thermal conductivity than the high-Al layers, creating thermal pathways that conduct heat away from the channel layer more effectively, thus preventing excessive temperature rise while maintaining the beneficial stress distribution provided by the multilayer structure.
Solution Approach 2:
The buffer layer is constructed as a composite material system with alternating layers of different Al compositions. This composite structure combines the stress-management properties of high-Al layers with the thermal conduction properties of low-Al layers, achieving both improved device performance and controlled channel layer temperature.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively releases heat from the nitride compound semiconductor, improving the reliability and reducing temperature increases in the channel layer, thereby enhancing the performance and reliability of semiconductor electronic devices.
Implementation Method 1
a heat dissipation layer is in the recess contiguous to the multilayer buffer layer and a layer on this multilayer buffer layer and has a higher thermal conductivity than the multilayer buffer layer
Data Source
AI summary
A nitride compound semiconductor has a substrate and a nitride compound semiconductor stack on the substrate. The nitride compound semiconductor stack includes a multilayer buffer layer, a channel layer on this multilayer buffer layer, and an electron supply layer on this channel layer. A recess extends from the surface of the electron supply layer through the channel layer and the multilayer buffer layer. A heat dissipation layer in this recess is contiguous to the multilayer buffer layer and the channel layer and has a higher thermal conductivity than the multilayer buffer layer.