Nitride Semiconductor Layer Indium Segregation Control
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Solution Overview
Problem
The challenge lies in forming high-quality nitride semiconductor layers with indium (In) for semiconductor light emitting devices, as existing methods face issues with indium segregation leading to crystal defects and reduced light emission efficiency.
Innovation Solution
A method involving the use of a specific gas flow ratio, including hydrogen, during the metal organic chemical vapor deposition (MOCVD) process to form nitride semiconductor layers, where the well layer is grown with a carrier gas containing hydrogen, which helps in suppressing indium segregation and improving crystal quality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional MOCVD process is used to form nitride semiconductor layer with In, then the layer can be formed, but In segregation occurs leading to crystal defects and reduced light emission efficiency
Solution Approach 1:
The patent changes the chemical composition parameters of the carrier gas by introducing hydrogen at specific flow rates (0.07-0.15% of total flow rate). This parameter change modifies the deposition environment to suppress In segregation during MOCVD, thereby improving crystal quality and preventing phase separation while maintaining light emission efficiency
Solution Approach 2:
Hydrogen gas acts as an intermediary substance in the carrier gas mixture. It mediates the deposition process by influencing the transport and incorporation of indium atoms, preventing their segregation and promoting uniform distribution in the nitride semiconductor layer, which improves both crystal quality and device performance
2Reliability
If higher In composition is used in well layer, then light emission efficiency should improve, but thermal stability decreases and phase separation occurs
Solution Approach 1:
The patent modifies the process parameters (hydrogen flow rate in carrier gas) to enable stable incorporation of higher In composition without phase separation. The hydrogen presence stabilizes the high-In region during deposition, maintaining compositional uniformity and thermal stability while achieving high light emission efficiency
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the light emission efficiency and reduces crystal defects by maintaining a stable indium composition ratio, resulting in improved semiconductor light emitting devices with increased peak integrated intensity and reduced segregation of indium.
Implementation Method 1
forming a first nitride semiconductor layer on a substrate in a reactor supplied with a first carrier gas and a first source gas... including a process of forming a light emitting layer
Data Source
AI summary
According to one embodiment, a method is disclosed for manufacturing a nitride semiconductor layer. The method can include forming a first nitride semiconductor layer on a substrate in a reactor supplied with a first carrier gas and a first source gas. The first nitride semiconductor layer includes indium. The first carrier gas includes hydrogen supplied into the reactor at a first flow rate and includes nitrogen supplied into the reactor at a second flow rate. The first source gas includes indium and nitrogen and supplied into the reactor at a third flow rate. The first flow rate is not less than 0.07% and not more than 0.15% of a sum of the first flow rate, the second flow rate, and the third flow rate.