Nitride Semiconductor Insulating Layer Charge Compensation
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Solution Overview
Problem
The charge-up phenomenon during the manufacturing process of semiconductor devices with nitride semiconductors leads to leakage current and changes in threshold voltage due to positive electric charges generated around the gate electrode, causing damage to the semiconductor layer and altering the device's performance.
Innovation Solution
A method involving the formation of a semiconductor device with a silicon nitride or aluminum oxide insulating layer having specific FTIR peak positions and the use of connection regions to electrically connect active regions, reducing positive electric charges and minimizing leakage current and threshold voltage changes through dry etching processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional insulating layer is used during dry etching, then the insulating layer provides electrical isolation, but positive electric charges accumulate around the gate electrode causing leakage current and threshold voltage changes
Solution Approach 1:
A charge compensation layer made of nitride semiconductor material is introduced between the gate electrode and the conventional insulating layer. This intermediary layer captures positive electric charges generated during dry etching through electron supply from the 2D electron gas, preventing charge accumulation around the gate electrode and eliminating leakage current and threshold voltage shifts.
Solution Approach 2:
The patent converts the harmful charge-up phenomenon into a beneficial effect by utilizing the 2D electron gas properties. The positive charges generated during dry etching are deliberately allowed to form in the charge compensation layer, where they are neutralized by electrons from the 2D electron gas, transforming a manufacturing defect into a self-correcting mechanism that improves device reliability.
2Manufacturing precision
If ion implantation is used to create active regions, then the semiconductor device gains desired electrical characteristics, but positive electric charges are generated that cause charge-up phenomenon
Solution Approach 1:
The charge compensation layer serves as an intermediary that intercepts positive electric charges generated during ion implantation before they can reach and accumulate around the gate electrode. The nitride semiconductor material in this layer captures the charges, preventing the charge-up phenomenon while preserving the beneficial electrical characteristics created by ion implantation in the active regions.
3Reliability
If the insulating layer breakdown voltage is high, then electrical isolation is effective, but charge-up phenomenon cannot be suppressed
Solution Approach 1:
The insulating structure is segmented into two distinct functional layers: a charge compensation layer made of nitride semiconductor material that captures positive charges, and a conventional insulating layer that provides electrical isolation. This segmentation allows each layer to perform its specialized function independently, achieving both charge suppression and effective electrical isolation without contradiction.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively reduces leakage current and prevents damage to the semiconductor layer, thereby stabilizing the threshold voltage and improving the manufacturing process of nitride semiconductor devices.
Implementation Method 1
forming an insulating layer that is made of silicon nitride, of which an FTIR peak position of a silicon-nitrogen stretching vibration is less than or equal to 2160 cm−1
Implementation Method 2
of aluminum oxide, of which an FTIR peak position of an aluminum-oxygen stretching vibration is greater than or equal to 960 cm−1
Implementation Method 3
forming an opening selectively in the insulating layer by dry etching
Data Source
AI summary
A method for manufacturing a semiconductor device includes: forming a first active region, a second active region, an inactive region located between the first active region and the second active region, and a third active region, which crosses the inactive region to electrically connect the first active region to the second active region, in a semiconductor layer; forming an insulating layer on the semiconductor layer; and forming an opening selectively in the insulating layer by dry etching.