Nitride Semiconductor Intermediate Region Si Doping
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current semiconductor elements using nitride semiconductors face challenges in improving characteristics such as mobility and reducing dislocation density, which affects their electrical performance.
Innovation Solution
Incorporating an intermediate region with a specific Si concentration range (1×10^18/cm^3 to 1×10^19/cm^3) and low charge density (3×10^17/cm^3 or less) between nitride semiconductor regions, and employing surface processing techniques like UV light irradiation and alkaline or acidic treatments to stabilize Si and reduce charge density.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If an intermediate region with Si doping is introduced between nitride semiconductor regions, then mobility is improved, but dislocation density may increase and charge density control becomes difficult
Solution Approach 1:
The patent applies local quality by creating an intermediate region with specific Si concentration (1×10^18/cm³ to 1×10^19/cm³) and low charge density (3×10^17/cm³ or less) between the first and second nitride semiconductor regions. This localized doping strategy improves mobility in the critical intermediate zone without introducing excessive dislocations throughout the entire structure.
Solution Approach 2:
The patent utilizes parameter changes by precisely controlling the Si concentration and charge density parameters in the intermediate region. By adjusting these parameters to specific ranges, the patent achieves improved mobility while maintaining acceptable dislocation density, resolving the contradiction between speed and reliability.
2Manufacturing precision
If surface processing is performed to stabilize Si and reduce charge density, then crystal quality is improved, but manufacturing complexity increases
Solution Approach 1:
The patent applies preliminary action by performing surface processing on the first nitride semiconductor region before forming the intermediate region. This preliminary surface treatment stabilizes Si and reduces charge density in advance, improving crystal quality without requiring complex post-processing steps.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the semiconductor element's mobility while reducing dislocation density and unfavorable electrical effects, leading to improved crystal quality and performance.
Implementation Method 1
performing surface processing of the first nitride semiconductor region after the processing
Implementation Method 2
processing a first nitride semiconductor region in an atmosphere including Si
Data Source
AI summary
According to one embodiment, a semiconductor element includes a first nitride semiconductor region, a second nitride semiconductor region, and an intermediate region provided between the first nitride semiconductor region and the second nitride semiconductor region. A Si concentration in the intermediate region is not less than 1×1018/cm3 and not more than 1×1019/cm3. A charge density in the intermediate region is 3×1017/cm3 or less.