Nitride Semiconductor Wafer Division Reducing Leakage Current
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Solution Overview
Problem
Existing methods for manufacturing light emitting elements fail to adequately reduce leakage current, which affects their performance and optical output.
Innovation Solution
A method involving a semiconductor wafer with n-side and p-side nitride semiconductor layers, where selective removal and annealing reduce resistance, and a protective layer is applied to minimize damage from laser irradiation, thereby reducing leakage current and enhancing optical output.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If a protective layer is disposed on exposed surfaces to reduce dust attachment, then dust attachment is reduced, but leakage current occurrence is not sufficiently reduced
Solution Approach 1:
The patent applies preliminary action by performing selective removal of semiconductor layers to expose the n-side nitride semiconductor layer at border regions before the laser irradiation step. This pre-exposure creates a structural configuration where the n-side layer acts as a barrier to prevent dust from reaching critical interfaces during subsequent processing, thereby addressing both dust attachment and leakage current issues proactively
Solution Approach 2:
The patent implements local quality by creating different structural configurations at different locations: at border regions between element areas, the semiconductor layers are selectively removed to expose the n-side nitride semiconductor layer, while in the center regions of element areas, the full layered structure is maintained. This localized structural differentiation provides dust protection at critical borders without affecting the electrical performance in active regions
2Ease of manufacture
If laser light is irradiated into the substrate to form modified regions, then wafer division is enabled, but damage to semiconductor layers may occur
Solution Approach 1:
The patent applies preliminary action by pre-removing semiconductor layers at border regions before laser irradiation. This creates a configuration where the laser beam encounters fewer layers at borders, reducing the risk of damage to sensitive semiconductor structures during the division process while still enabling effective wafer splitting
Solution Approach 2:
The patent extracts or removes the p-side and active nitride semiconductor layers at border regions, leaving only the substrate and n-side nitride semiconductor layer. This extraction eliminates vulnerable layers from the laser irradiation path at critical regions, preventing damage while maintaining the integrity of semiconductor layers in active element areas
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively reduces leakage current and increases optical output by maintaining high resistance at critical areas, leading to improved light emitting element performance.
Implementation Method 1
annealing the semiconductor wafer to reduce a resistance of regions of the p-side nitride semiconductor layer
Implementation Method 2
irradiating a laser light in an interior region of the substrate so as to form a plurality of modified regions in the substrate
Data Source
AI summary
A method of manufacturing a plurality of light emitting elements, the method includes: providing a semiconductor wafer; dividing the p-side nitride semiconductor layer into a plurality of demarcated element regions; forming a protective layer on regions including an outer periphery of an upper surface of the p-side nitride semiconductor layer of each of the plurality of demarcated element regions and exposed side surfaces in the semiconductor structure that are formed by the selectively removing the portion of the p-side nitride semiconductor layer; reducing a resistance of regions of the p-side nitride semiconductor layer; and dividing the semiconductor wafer into a plurality of light emitting elements.