Nitride Semiconductor Light-Emitting Device with Graded Barrier Doping
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Solution Overview
Problem
Conventional nitride semiconductor light-emitting devices with multiple quantum well structures fail to achieve satisfactory brightness due to inadequate doping methods in barrier and well layers.
Innovation Solution
A semiconductor light-emitting device with a multiple quantum well structure where the well layer has unintentionally doped impurities, and the barrier layers have intentionally doped n-type impurities near the well layer interfaces and unintentionally doped impurities distant from the interfaces, enhancing the brightness and reducing forward voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If n-type impurities are doped uniformly in barrier layers or well layers using conventional methods, then the manufacturing process is simple, but the brightness of the light-emitting device is not satisfactory
Solution Approach 1:
The patent applies local quality by creating a non-uniform doping distribution within the barrier layer. Specifically, the barrier layer is divided into a first region adjacent to the well layer with higher n-type impurity concentration and a second region distant from the well layer with lower n-type impurity concentration. This localized variation in doping quality optimizes carrier injection efficiency at the interface while maintaining manageable manufacturing complexity through a single barrier layer structure with graded doping.
2Power
If n-type impurities are doped in both well layers and barrier layers uniformly, then the manufacturing process is straightforward, but the forward voltage remains high
Solution Approach 1:
The patent reduces forward voltage by implementing local quality optimization in the barrier layer doping. The first region of the barrier layer adjacent to the well layer is doped with n-type impurities at a concentration of 1×10^17 to 1×10^19 atoms/cm³, while the second region distant from the well layer has lower doping concentration. This localized high doping near the interface improves carrier injection efficiency and reduces forward voltage without requiring complex multi-step doping processes.
3Productivity
If conventional uniform doping methods are used in multiple quantum well structures, then the device structure is simple to manufacture, but the light-emitting efficiency is insufficient
Solution Approach 1:
The patent enhances light-emitting efficiency by applying local quality principles to the barrier layer doping distribution. The barrier layer contains a first region with higher n-type impurity concentration (1×10^17 to 1×10^19 atoms/cm³) adjacent to the well layer and a second region with lower concentration distant from the well layer. This localized doping optimization improves carrier injection and recombination efficiency at the critical interface region, thereby enhancing overall light-emitting efficiency without requiring complex multi-layer doping structures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed structure significantly improves light-emitting device brightness and electrical characteristics by optimizing the doping of barrier layers, resulting in higher light intensity and lower operating voltage compared to conventional devices.
Implementation Method 1
a first barrier layer, and a second barrier layer. The well layer is disposed between the first barrier layer and the second barrier layer, wherein the first barrier layer comprises a portion, having intentionally doped n-type impurities, near the well layer
Data Source
AI summary
A semiconductor light-emitting device comprises a substrate; and an active layer formed over the substrate comprising a well layer having an unintentionally-doped impurities; a first barrier layer; and a second barrier layer, wherein the well layer is disposed between the first barrier layer and the second barrier layer, the first barrier layer comprises an n-type-impurities-intentionally-doped portion near to the well layer, and an n-type-impurities-unintentionally-doped portion distant from the well layer; the second barrier layer comprises an n-type-impurities-unintentionally-doped portion near to the well layer.