Nitride Semiconductor Light Emitting Device Delta-Doped Layer
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Solution Overview
Problem
Current semiconductor light emitting devices face challenges in improving the conductivity and crystallinity of second conductive type semiconductor layers, which affects the efficiency and performance of nitride semiconductor-based LEDs and laser diodes.
Innovation Solution
The implementation of delta-doped layers using second conductive type dopants in the semiconductor light emitting device structure, specifically forming a delta-doped layer on an undoped semiconductor layer, enhances the conductivity and crystallinity of the second conductive type semiconductor layer, thereby improving the device's optical and electrical performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a second conductive type semiconductor layer is formed without delta-doping, then the device structure is simpler, but the conductivity and crystallinity are insufficient
Solution Approach 1:
The patent applies local quality by forming a delta-doped layer only in specific regions where conductivity enhancement is needed, rather than uniformly doping the entire semiconductor layer. This localized doping approach improves conductivity and crystallinity in critical areas while maintaining structural simplicity elsewhere, thus resolving the contradiction between reliability improvement and device complexity.
Solution Approach 2:
The patent changes the doping parameter by introducing a delta-doped layer with specific dopant concentration and depth control. This parameter modification enables precise control over conductivity and crystallinity in the second conductive type semiconductor layer, achieving improved reliability without requiring complete structural redesign.
2Reliability
If delta-doped layers are formed to improve conductivity, then hole concentration increases, but manufacturing process becomes more complex
Solution Approach 1:
The patent applies preliminary action by forming the delta-doped layer during the semiconductor layer growth process itself, rather than as a separate post-processing step. This integration of doping into the growth process achieves the desired hole concentration while minimizing additional manufacturing complexity, as the doping occurs concurrently with layer formation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The use of delta-doped layers increases hole concentration, reduces operating voltage, and enhances the inner quantum efficiency and crystallinity of the semiconductor light emitting device, leading to improved optical characteristics and efficiency.
Implementation Method 1
forming a delta-doped layer on an undoped semiconductor layer... increases hole concentration
Data Source
AI summary
A semiconductor light emitting device includes a first nitride semiconductor layer, a dopant doped semiconductor layer on the first nitride semiconductor layer, an active layer on the dopant doped semiconductor layer, a delta doped layer on the active layer, a superlattice structure on the delta doped layer, an undoped layer on the superlattice layer, a second nitride semiconductor layer including a first n-type dopant, a third nitride semiconductor layer including a second n-type dopant, and a fourth nitride semiconductor layer including a third n-type dopant.