Nitride Semiconductor Light Emitting Device Electrode Layout
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Solution Overview
Problem
Existing semiconductor light emitting devices face challenges in optimizing electrode configurations and layouts to enhance electrical characteristics and luminous efficiency without impeding light extraction, as current designs often restrict the degrees of freedom in electrode placement.
Innovation Solution
The semiconductor light emitting device incorporates a p-side electrode and multiple n-side electrodes on the surface opposite to the light extraction surface, with a specific layout where n-side regions are separated and connected by a common interconnect unit, allowing for efficient current distribution and heat dissipation while maintaining high light output, using nitride semiconductor materials and a phosphor layer for wavelength conversion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If electrodes are placed on the light extraction surface, then electrical connections are achieved, but light extraction efficiency deteriorates due to electrode obstruction
Solution Approach 1:
The patent moves the electrode placement from the light extraction surface (2D plane) to the side surface of the semiconductor layer, utilizing a different spatial dimension. This allows electrical connections to be established without the electrodes blocking the light extraction path, thereby resolving the contradiction between electrical connection reliability and light extraction efficiency.
2Ease of manufacture
If electrode configurations are simplified, then manufacturing ease improves, but electrical characteristics deteriorate due to insufficient optimization
Solution Approach 1:
The patent divides the electrode structure into multiple segments: a first electrode on the side surface, a second electrode on the light extraction surface, and an intermediate conductive layer connecting them. This segmentation allows each part to be optimized independently for its specific function while maintaining overall electrical performance, resolving the contradiction between manufacturing simplicity and electrical characteristics.
3Length of moving object
If device thickness is reduced, then miniaturization is achieved, but mechanical strength deteriorates
Solution Approach 1:
The patent employs composite material structures including stacked semiconductor layers with different properties (n-type, active, p-type layers), combined with metal electrodes and insulating layers. This composite structure provides enhanced mechanical strength through material diversity and layered architecture, allowing thin device design without sacrificing structural integrity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration improves light extraction efficiency, current distribution, and heat dissipation, enabling higher light output and mechanical strength by optimizing electrode placement without obstructing light extraction, and allows for thinner device designs.
Implementation Method 1
using nitride semiconductor materials and a phosphor layer for wavelength conversion
Data Source
AI summary
According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a light emitting layer, a second semiconductor layer, a p-side electrode, a plurality of n-side electrodes, a first insulating film, a p-side interconnect unit, and an n-side interconnect unit. The p-side interconnect unit is provided on the first insulating film to connect to the p-side electrode through a first via piercing the first insulating film. The n-side interconnect unit is provided on the first insulating film to commonly connect to the plurality of n-side electrodes through a second via piercing the first insulating film. The plurality of n-side regions is separated from each other without being linked at the second surface. The p-side region is provided around each of the n-side regions at the second surface.