Nitride Semiconductor Light-Emitting Device Substrate Detachment
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Solution Overview
Problem
Current light-emitting devices using nitride semiconductor substrates face challenges in achieving high light-emitting efficiency and mass productivity due to issues with current pathway resistance and substrate size limitations, particularly when using insulator substrates like sapphire or non-conductive substrates.
Innovation Solution
A method involving crystal growth of a laminated body with an etching easy layer on a III-V group compound semiconductor substrate, followed by bonding to a second substrate and detaching using solution etching or mechanical polishing, allowing for the formation of a light-emitting device with improved crystallinity and conductivity, enabling efficient light emission and large-scale production.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If an insulator substrate like sapphire is used for crystal growth, then the substrate can support nitride semiconductor growth, but the current pathway resistance increases and light-emitting efficiency decreases
Solution Approach 1:
The substrate system is segmented into multiple functional layers: a lower substrate for mechanical support, an intermediate buffer layer for crystal orientation, and an upper semiconductor layer for light emission. This segmentation allows each layer to be optimized for its specific function, resolving the contradiction between substrate stability and light-emitting efficiency.
Solution Approach 2:
A buffer layer is introduced as an intermediary between the insulator substrate and the nitride semiconductor layer. This buffer layer serves as a mediator that provides both mechanical support from the substrate and appropriate crystal orientation for the semiconductor, enabling low resistance current pathways while maintaining substrate stability.
2Loss of energy
If a conductive nitride semiconductor substrate is used, then low resistance and high light-emitting efficiency are achieved, but substrate size growth is limited and mass productivity decreases
Solution Approach 1:
The solution transitions from growing large substrates in a single dimension to stacking multiple smaller substrates vertically. This dimensional change allows mass production by combining multiple standard-sized substrates, achieving both high light-emitting efficiency and increased mass productivity.
3Productivity
If multiple substrates are bonded together to increase size, then mass productivity improves, but the bonding process complexity increases
Solution Approach 1:
The substrates are prepared in advance with standardized surfaces and bonding interfaces. This preliminary preparation simplifies the actual bonding process, reducing complexity while enabling efficient mass production through systematic assembly of pre-characterized components.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances light-emitting efficiency by reducing serial resistance and enabling larger substrate sizes, resulting in high optical output and increased mass productivity while maintaining high light-emitting efficiency, suitable for various lighting applications.
Implementation Method 1
removing the etching easy layer by using a solution etching method
Implementation Method 2
removing the first substrate and the etching easy layer by using mechanical polishing method
Implementation Method 3
performing, on a first substrate made of III-V group compound semiconductor, crystal growth of a laminated body
Data Source
AI summary
A method for producing a light-emitting device, includes: performing, on a first substrate made of III-V group compound semiconductor, crystal growth of a laminated body including an etching easy layer contiguous to the first substrate and a light-emitting layer made of nitride semiconductor; bonding a second substrate and the laminated body; and detaching the second substrate provided with the light-emitting layer from the first substrate by, one of removing the etching easy layer by using a solution etching method, and removing the first substrate and the etching easy layer by using mechanical polishing method.