Nitride Semiconductor Light-Emitting System with Copper Base Mount
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Solution Overview
Problem
Conventional nitride semiconductor light-emitting systems face issues with thermal conductivity and material deterioration, leading to inefficient heat radiation and rapid degradation of nitride semiconductor light-emitting device characteristics, especially under high optical output conditions.
Innovation Solution
A nitride semiconductor light-emitting system is designed with a base mount made of high thermal conductivity materials like copper, using a buffer member with a smaller standard oxidation-reduction potential than the base material, and an insulating member containing silicon oxide, to separate the base from the insulating member and improve heat radiation while reducing material deterioration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If a base mount made of high thermal conductivity material like copper is used, then heat radiation efficiency is improved, but material deterioration and device characteristic degradation occur
Solution Approach 1:
The patent introduces a buffer member as an intermediary between the copper base mount and the insulating member containing silicon oxide. This buffer member prevents direct contact between copper and silicon oxide, eliminating the harmful chemical reaction that causes device degradation while preserving the high thermal conductivity of copper for efficient heat radiation.
Solution Approach 2:
The patent employs a composite structure consisting of multiple materials: copper base mount, buffer member material, and insulating member material. This composite approach allows each material to perform its optimal function - copper for heat conduction, buffer member for chemical isolation, and insulating member for electrical insulation - while preventing harmful interactions between them.
2Ease of manufacture
If conventional package configurations are used, then manufacturing simplicity is maintained, but thermal conductivity and heat radiation are insufficient
Solution Approach 1:
The patent changes the material parameters of the base mount from conventional materials to high thermal conductivity copper, and introduces a buffer member with specific material properties. This parameter change significantly improves heat radiation efficiency while the buffer member is designed to be thin, minimizing its impact on overall manufacturing complexity.
3Device complexity
If the base mount directly contacts the insulating member containing silicon oxide, then device structure is simplified, but rapid device characteristic deterioration occurs
Solution Approach 1:
The buffer member serves as a protective intermediary between the base mount and the insulating member containing silicon oxide. It prevents direct contact and harmful chemical reactions while maintaining structural integrity and electrical insulation, thus preventing rapid device degradation without significantly increasing structural complexity.
4Illumination intensity
If high optical output is achieved, then light intensity is improved, but device lifespan decreases due to rapid deterioration
Solution Approach 1:
The patent converts the potentially harmful interaction between copper and silicon oxide into a beneficial protective mechanism. The buffer member, positioned between these materials, prevents harmful chemical reactions that would otherwise accelerate device degradation under high optical output conditions, thereby extending device lifespan while maintaining high light intensity capability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration efficiently radiates Joule heat and reduces the deterioration of nitride semiconductor light-emitting device characteristics, maintaining high optical output and extending device lifespan even under high light density conditions.
Implementation Method 1
using a buffer member with a smaller standard oxidation-reduction potential than the base material, and an insulating member containing silicon oxide, to separate the base from the insulating member
Implementation Method 2
A nitride semiconductor light-emitting system is designed with a base mount made of high thermal conductivity materials like copper, using a buffer member... to separate the base from the insulating member and improve heat radiation
Data Source
AI summary
A nitride semiconductor light-emitting system includes a nitride semiconductor light-emitting device, a base mount holding the nitride semiconductor light-emitting device, having an opening, and containing first metal as a main component, a cap adhered to the base mount, and a lead pin penetrating the opening. The lead pin is fixed to an inner wall of the opening with an insulating member and a buffer member interposed therebetween, the buffer member and the insulating member being stacked on the inner wall in this order. The insulating member contains silicon oxide as a component. The buffer member is made of second metal having a smaller standard oxidation-reduction potential than the first metal, or an alloy containing the second metal.