Group III Nitride Semiconductor Light Extraction Protrusions
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Solution Overview
Problem
Conventional semiconductor light-emitting devices have limited light extraction performance due to the simplicity of their light extraction surfaces, which can be improved by incorporating more complex irregularities.
Innovation Solution
A Group III nitride semiconductor light-emitting device with protrusions extending from the n-type semiconductor layer, featuring a tubular shape with varying inner diameters and through holes, creating a complex light extraction surface that effectively scatters light for enhanced extraction efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If simple light extraction surfaces are used, then device structure is simple and manufacturing is easier, but light extraction performance is limited
Solution Approach 1:
The invention forms protrusions with curved surfaces on the light extraction surface of the semiconductor layer. These curved structures include rounded tips and arc-shaped side surfaces, which differ from conventional flat or linear patterns. The curvature helps to scatter light in multiple directions and reduce total internal reflection, thereby improving light extraction efficiency while maintaining manufacturing feasibility through standard photolithography and etching processes.
Solution Approach 2:
The invention transitions from two-dimensional planar light extraction surfaces to three-dimensional protruding structures. The protrusions extend vertically from the semiconductor layer surface, creating depth and volume that enable light scattering in additional spatial dimensions. This dimensional enhancement allows light to be extracted more effectively without complicating the fundamental device architecture or manufacturing flow.
2Productivity
If conventional unevenly shaped portions are formed on light extraction surface, then some light extraction improvement is achieved, but extraction performance can be further improved by more complicated irregularities
Solution Approach 1:
The light extraction surface is segmented into multiple discrete protrusions distributed across the semiconductor layer. Each protrusion acts as an independent light scattering element, and their collective effect enhances overall light extraction. The segmented structure is formed through standard photolithography patterning and etching, avoiding the need for complex continuous irregular surfaces while achieving superior light management.
Solution Approach 2:
The protrusions are strategically positioned and sized to create localized regions of enhanced light extraction. By concentrating scattering structures at specific locations on the light extraction surface, the invention optimizes light output in critical areas without requiring uniform complexity across the entire device, thus balancing performance improvement with manufacturing simplicity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The device achieves significantly higher light extraction performance and external quantum efficiency by scattering light through the complex irregularities, leading to improved light emission and reduced threading dislocation density for better crystallinity.
Implementation Method 1
An angle between the first surface and the second semiconductor layer is 10° to 85°. The light then enters the wall portion of the first protrusion through the first surface, and then passes through the second surface of the wall portion of the protrusion
Implementation Method 2
During this process, the light is effectively scattered. Thus, the light is effectively extracted to the outside
Data Source
AI summary
There are provided a Group III nitride semiconductor light-emitting device having complicated irregularities on the light extraction surface. The light-emitting device comprises a substrate, a p-type semiconductor layer, a light-emitting layer, and an n-type semiconductor layer. The light-emitting device has protrusions extending upward from the surface of the n-type semiconductor layer on the n-type semiconductor layer. Each protrusion has a wall portion disposed so as to intersect with the surface of the n-type semiconductor layer. The wall portion has a first surface facing the n-type semiconductor layer. An angle between the first surface and the n-type semiconductor layer is 10° to 85°.