Nitride Semiconductor Device with Localized Barrier Layer Removal
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Solution Overview
Problem
Nitride semiconductor devices face challenges in achieving high avalanche capability and low on-resistance while maintaining high breakdown voltage, as existing methods do not effectively manage the absorption and mobility of electrons and holes generated during avalanche breakdown.
Innovation Solution
The nitride semiconductor device incorporates a specific layer structure with a first barrier layer, a carrier running layer, and a second barrier layer, where the second barrier layer and carrier running layer are removed in the source electrode region, enabling the formation of two-dimensional electron and hole systems within the carrier running layer, which effectively absorb and discharge carriers, and the use of different materials for source electrodes to reduce contact resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a nitride semiconductor device uses conventional methods to increase avalanche capability (connecting source electrode to substrate or using p-type GaN layer), then avalanche capability is improved, but on-resistance increases and breakdown voltage decreases
Solution Approach 1:
The patent applies local quality by creating different layer structures in different regions: in the source electrode contact region, the second barrier layer and carrier running layer are removed to enable direct contact with the first barrier layer, while in other regions the complete layer structure is maintained. This localized modification optimizes carrier absorption at the contact region without compromising the overall device performance, achieving high avalanche capability with low on-resistance
Solution Approach 2:
The source electrode is divided into multiple contact regions that contact different layers (first barrier layer, second barrier layer, and carrier running layer) at different positions. This segmentation allows different parts of the source electrode to serve different functions: some regions absorb holes while others maintain low resistance contact, thereby improving avalanche capability without increasing on-resistance
2Reliability
If the second barrier layer and carrier running layer are removed in the source electrode region, then carrier absorption capability is improved, but device complexity increases
Solution Approach 1:
The patent modifies only the source electrode contact region by removing the second barrier layer and carrier running layer locally, while maintaining the complete layer structure in other regions. This localized approach improves carrier absorption capability without unnecessarily complicating the overall device structure, as the modification is confined to where it is most needed
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the avalanche capability and reduces on-resistance by effectively managing carrier absorption and mobility, resulting in a nitride semiconductor device with high avalanche capability and low on-resistance.
Implementation Method 1
enabling the formation of two-dimensional electron and hole systems within the carrier running layer, which effectively absorb and discharge carriers
Implementation Method 2
Since a nitride semiconductor has a high intensity of the critical electric field, the semiconductor device realizing the high breakdown voltage and the low on resistance is achieved by using the nitride semiconductor
Data Source
AI summary
According to one embodiment, a nitride semiconductor device includes semiconductor stacked layers provided on a substrate and including a nitride semiconductor; a source electrode and a drain electrode provided on the layers and being in contact with the layers; and a gate electrode provided on the layers and provided between the source electrode and the drain electrode. The layers have a first barrier layer, a second barrier layer, and a carrier running layer interposed between the first barrier layer and the second barrier layer. The second barrier layer and the carrier running layer are removed in a region in which the source electrode on the layers is provided. A part of the source electrode is in contact with the first barrier layer. And another part of the source electrode other than the part of the source electrode is in contact with the second barrier layer.