Nitride Semiconductor Light Emitting Device Mask Seed Layer
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Solution Overview
Problem
Current semiconductor light emitting devices face challenges in achieving high crystalline quality and efficient light emission due to limitations in the manufacturing process and light efficiency of III-V group nitride semiconductors.
Innovation Solution
A semiconductor light emitting device is designed with a mask seed layer comprising a II group element, a nitride layer with a III group element, and conductive semiconductor layers, where the mask seed layer functions as a buffer to prevent threading dislocations, allowing for the growth of high crystalline thin films and efficient light emission.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a conventional manufacturing process is used for III-V group nitride semiconductor light emitting devices, then the device structure can be formed, but threading dislocations occur and crystalline quality deteriorates
Solution Approach 1:
A mask seed layer comprising a II group element is formed on the substrate before forming the nitride layer. This preliminary mask seed layer prevents threading dislocations from propagating into the subsequent nitride layer and active layers, thereby improving crystalline quality without affecting the device structure formation process.
2Manufacturing precision
If the mask seed layer comprising a II group element is formed, then threading dislocation density is reduced and crystalline quality improves, but the device structure becomes more complex
Solution Approach 1:
The mask seed layer comprising a II group element acts as an intermediary layer between the substrate and the nitride layer. It serves as a buffer that prevents threading dislocation propagation while allowing the subsequent layers to be formed with high crystalline quality, thus resolving the contradiction between improved crystalline quality and increased structural complexity.
3Manufacturing precision
If the nitride layer is formed on the mask seed layer, then high crystalline thin film growth is enabled, but manufacturing process steps increase
Solution Approach 1:
The mask seed layer is formed in advance on the substrate before the nitride layer deposition. This preliminary preparation enables the subsequent nitride layer to grow with high crystalline quality by preventing dislocation propagation, while the overall process remains integrated and efficient.
Solution Approach 2:
The mask seed layer serves as an intermediary that facilitates high-quality nitride layer growth without requiring additional complex process steps. It acts as a buffer that enables direct growth of high crystalline thin films on conventional substrates.
Data Source
AI summary
A semiconductor light emitting device and a method of manufacturing the same are provided. The semiconductor light emitting device comprises a substrate, a mask seed layer formed on the substrate and comprising a II group element, a nitride layer formed on the mask seed layer and comprising a III group element, a first conductive semiconductor layer on the nitride layer, an active layer on the first conductive layer, and a second conducive semiconductor layer on the active layer.