Nitride Semiconductor Light Emitting Element Mg Activation
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Solution Overview
Problem
Nitride semiconductor light emitting elements with Mg-doped p-type layers face low Mg activation rates, especially when the Al mixed crystal ratio is high, leading to insufficient operating voltage and reduced luminous efficiency.
Innovation Solution
A method of manufacturing nitride semiconductor light emitting elements involves growing p-side nitride semiconductor layers with varying Al mixed crystal ratios and Mg source gas flow rates, including an undoped AlGaN layer and separate lightly doped and undoped layers to enhance Mg activation without reducing optical transmittance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If Mg is used as a p-type dopant in p-type semiconductor layers, then the light emitting element can achieve p-type conductivity, but the Mg activation rate is low resulting in insufficient operating voltage
Solution Approach 1:
The p-type semiconductor layer is divided into multiple sub-layers with different Al mixed crystal ratios and Mg doping concentrations. Specifically, a first p-type layer with higher Al content (20-30%) is grown adjacent to the active layer, followed by a second p-type layer with lower Al content (6-10%) and higher Mg concentration. This segmentation allows each layer to perform optimized functions: the first layer provides structural stability while the second layer achieves high Mg activation for low operating voltage.
Solution Approach 2:
Different regions of the p-type semiconductor layer are assigned different local properties: the first p-type layer near the active layer has higher Al content and lower Mg concentration to maintain crystal quality, while the second p-type layer has lower Al content and higher Mg concentration to maximize Mg activation. This local quality differentiation resolves the contradiction by optimizing Mg activation in specific regions without compromising overall layer stability.
2Stability of the object's composition
If the Al mixed crystal ratio in the p-type semiconductor layer is increased, then the structural stability is improved, but the Mg activation rate decreases
Solution Approach 1:
The p-type semiconductor layer is segmented into two distinct layers with different Al mixed crystal ratios. The first layer contains 20-30% Al to provide structural stability adjacent to the active layer, while the second layer contains 6-10% Al to enable high Mg activation. This segmentation allows both high structural stability and high Mg activation rate to be achieved in different regions.
Solution Approach 2:
The Al mixed crystal ratio parameter is changed between layers: the first layer uses 20-30% Al for stability, while the second layer uses 6-10% Al for high Mg activation. This parameter change strategy resolves the contradiction by applying different Al concentrations in different layers, allowing each layer to optimize for its specific function.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach increases the Mg activation ratio in the p-type semiconductor layer, enabling the production of nitride semiconductor light emitting elements with low operating voltage and improved luminous efficiency.
Implementation Method 1
growing an n-side nitride semiconductor layer, growing an active layer on the n-side nitride semiconductor layer, and growing a p-side nitride semiconductor layer on the active layer
Data Source
AI summary
A method of manufacturing a nitride semiconductor light emitting element includes: growing an n-side nitride semiconductor layer; growing an active layer on the n-side nitride semiconductor layer; and growing a p-side nitride semiconductor layer on the active layer, which includes: growing a first p-side nitride semiconductor layer, growing a second p-side nitride semiconductor layer, growing a third p-side nitride semiconductor layer, and growing a fourth p-side nitride semiconductor layer, while varying flow rates of an Al source gas, a Ga source gas, an N source gas, and a Mg source gas.