Nitride Semiconductor Device With Offset Source Electrode
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Solution Overview
Problem
There is a need for a nitride semiconductor device that can reduce on-resistance.
Innovation Solution
A nitride semiconductor device is designed with a nitride semiconductor layer, multiple channel cells, a source lead region of a second conductivity type, and a source electrode positioned away from the line of channel cells, allowing the channel cells to extend in one direction and be arranged in a second direction, thereby reducing on-resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If channel cells are arranged densely in conventional configurations, then arrangement density increases, but on-resistance cannot be sufficiently reduced due to layout constraints
Solution Approach 1:
The patent transitions from conventional two-dimensional planar arrangement of channel cells to a three-dimensional vertical arrangement where channel cells are stacked above each other. This dimensional change allows significantly higher arrangement density while maintaining low on-resistance by providing multiple parallel conduction paths through the vertical stack, effectively reducing the total resistance without increasing the device footprint.
Solution Approach 2:
The patent divides the semiconductor device into multiple discrete channel cells that can be independently arranged and connected. Each channel cell is segmented with its own source and drain regions, allowing flexible configuration and parallel operation. This segmentation enables the device to achieve low on-resistance through the parallel combination of multiple channel paths while maintaining high arrangement density.
2Ease of manufacture
If source electrode is positioned directly on the line of channel cells, then manufacturing is simplified, but leakage current increases and performance deteriorates
Solution Approach 1:
The patent employs asymmetric positioning of the source electrode relative to the channel cells. Instead of symmetric alignment on the channel cell line, the source electrode is offset to a specific position that optimizes electrical performance. This asymmetric arrangement reduces leakage current by minimizing unwanted electrical interactions while maintaining manufacturability through precise but non-symmetric positioning.
Solution Approach 2:
The patent introduces an intermediary connection structure between the source electrode and the channel cells. This intermediary element acts as a mediator that controls the electrical connection, reducing direct leakage paths while maintaining necessary electrical connectivity. The intermediary structure allows the source electrode to be positioned away from the channel cell line while still providing effective electrical connection.
Data Source
AI summary
A nitride semiconductor device includes a nitride semiconductor layer, channel cells in the nitride semiconductor layer, a source lead region of a second conductivity type in the nitride semiconductor layer, and a source electrode on a side where a first main surface of the nitride semiconductor layer is located. The channel cells each include a well region of a first conductivity type and a source region of the second conductivity type in contact with the well region. The source lead region is connected to the source region. The channel cells extend in a first direction in a planar view from a normal direction of the first main surface, and arranged in a second direction intersecting with the first direction in the planar view. The source electrode is in contact with the source lead region away from a line of the channel cells arranged in the second direction.