Nitride Semiconductor Light-Emitting Element Oxygen Doping
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Solution Overview
Problem
Current nitride semiconductor light-emitting elements have limitations in enhancing light output.
Innovation Solution
Incorporating an oxygen-containing portion with an oxygen concentration of at least 2.5×10^16 atoms/cm^3 in the p-type semiconductor layer and/or the electron blocking layer, which are formed during epitaxial growth in an oxygen atmosphere, to increase carrier concentration and suppress impurity diffusion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If conventional structures are used without oxygen-containing portions, then manufacturing is simpler, but light output is insufficient
Solution Approach 1:
The patent applies local quality by introducing oxygen-containing portions specifically in the p-type semiconductor layer and electron blocking layer, rather than uniformly modifying the entire device. This localized modification targets specific regions where oxygen incorporation enhances carrier concentration and suppresses impurity diffusion, thereby improving light output without requiring complex changes throughout the entire device structure.
Solution Approach 2:
The patent employs parameter changes by controlling the oxygen concentration within a specific range (2.5×10^16 to 1×10^18 atoms/cm³) in the p-type semiconductor layer and electron blocking layer. By optimizing this physical parameter, the invention achieves improved carrier concentration and reduced impurity diffusion, leading to enhanced light output while maintaining manufacturability through controlled epitaxial growth in an oxygen atmosphere.
2Reliability
If oxygen concentration is increased to improve carrier concentration, then light output improves, but risk of impurity diffusion increases
Solution Approach 1:
The patent resolves this contradiction by precisely controlling the oxygen concentration parameter within an optimal range (2.5×10^16 to 1×10^18 atoms/cm³). This parameter optimization ensures sufficient carrier concentration improvement while avoiding excessive oxygen that would cause harmful impurity diffusion. The specific concentration range represents a carefully balanced state where beneficial effects are maximized and harmful effects are suppressed.
Solution Approach 2:
The patent uses oxygen as an intermediary element that serves dual functions: it acts as a carrier concentration enhancer when present in appropriate amounts, and simultaneously serves as a diffusion barrier against other impurities when properly concentrated. This intermediary role of oxygen allows the system to achieve improved reliability without suffering from excessive impurity diffusion.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration improves light output and extends the lifespan of the light-emitting element by enhancing luminescent coupling and reducing hydrogen diffusion into the active layer.
Implementation Method 1
Incorporating an oxygen-containing portion with an oxygen concentration of at least 2.5×10^16 atoms/cm^3 in the p-type semiconductor layer and/or the electron blocking layer, which are formed during epitaxial growth in an oxygen atmosphere, to increase carrier concentration
Implementation Method 2
Incorporating an oxygen-containing portion with an oxygen concentration of at least 2.5×10^16 atoms/cm^3 in the p-type semiconductor layer and/or the electron blocking layer... to suppress impurity diffusion
Data Source
AI summary
A nitride semiconductor light-emitting element includes an n-type semiconductor layer; a p-type semiconductor layer; an active layer provided between the n-type semiconductor layer and the p-type semiconductor layer; and an electron blocking layer provided between the active layer and the p-type semiconductor layer. At least one of the p-type semiconductor layer and the electron blocking layer includes an oxygen-containing portion including oxygen. An oxygen concentration at each position of the oxygen-containing portion in a stacking direction of the n-type semiconductor layer, the active layer, the electron blocking layer and the p-type semiconductor layer is not less than 2.5×1016 atoms/cm3.