Nitride Semiconductor P-Type Layer Low Resistance Manufacturing
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Solution Overview
Problem
The challenge in manufacturing nitride semiconductor devices is the high resistance of p-type semiconductor layers due to hydrogen passivation and nitrogen desorption during thermal treatment, which complicates the process and degrades crystal quality.
Innovation Solution
A nitride semiconductor stacked structure is formed using a Group III material organometallic compound and Group V materials including ammonia and a hydrazine derivative, with a carbon concentration not exceeding 1×10^18 cm^-3, to create a p-type nitride semiconductor layer of low resistance without the need for thermal treatment.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If thermal treatment is carried out to activate Mg dopant, then the resistance of p-type semiconductor layer is reduced, but nitrogen desorbs from the surface causing crystal degradation
Solution Approach 1:
The patent applies preliminary action by conducting thermal treatment during the crystal growth process itself, rather than as a separate post-growth step. The p-type semiconductor layer is formed and activated in one continuous process, preventing nitrogen desorption that would occur with separate thermal treatment steps.
Solution Approach 2:
The patent merges the crystal growth process with the dopant activation process. By combining these two operations into a single integrated process, the need for separate thermal treatment is eliminated, thereby preventing nitrogen loss and crystal degradation while still achieving low resistance.
2Ease of manufacture
If ammonia is used as Group V material, then nitride semiconductor can be grown, but hydrogen atoms combine with P dopant causing high resistance
Solution Approach 1:
The patent changes the parameters of the crystal growth process, specifically the temperature profile and gas flow conditions, to prevent hydrogen-dopant combination. By optimizing these parameters during growth, the material achieves both successful crystal formation and low electrical resistance without requiring post-growth thermal treatment.
3Productivity
If process is simplified by avoiding thermal treatment, then manufacturing time is reduced, but dopant activation may be insufficient
Solution Approach 1:
The patent performs dopant activation as a preliminary action during the crystal growth phase itself. By incorporating the activation step into the growth process through controlled temperature and gas conditions, the material achieves full dopant activation without requiring separate post-growth thermal treatment, thus maintaining high productivity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach simplifies the manufacturing process and reduces resistance by preventing carbon incorporation, resulting in a nitride semiconductor with improved working efficiency and crystal quality.
Implementation Method 1
A nitride semiconductor stacked structure is formed using a Group III material organometallic compound and Group V materials including ammonia and a hydrazine derivative
Data Source
AI summary
A nitride semiconductor stacked structure having good working efficiency includes a p-type nitride semiconductor layer of low resistance, which is formed from an organometallic compound, compounds including Group V elements, including ammonia and a hydrazine derivative, and a p-type impurity material on a substrate. The p-type nitride layer has a carbon concentration not higher than 1×1018 cm−3.