Nitride Semiconductor Device with High Thermal Conductivity Pattern Layer
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Solution Overview
Problem
Semiconductor devices face efficiency deterioration and heat dissipation issues due to increased temperature, particularly in nitride semiconductor-based light emitting devices, which are prone to crystalline defects and reduced light emitting efficiency.
Innovation Solution
A semiconductor device design incorporating a pattern layer with higher thermal conductivity than the substrate and semiconductor structure, formed from materials like aluminum nitride (AlN), to enhance heat dissipation and maintain light extraction efficiency, featuring specific geometric configurations and material properties to optimize thermal conductivity and crystalline quality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If a sapphire substrate is used for growing nitride material, then the substrate can endure high temperatures and provide sturdiness, but it causes a large quantity of crystalline defects due to heterogeneous materials
Solution Approach 1:
A pattern layer made of aluminum nitride is introduced as an intermediary between the sapphire substrate and the nitride semiconductor layer. This pattern layer serves as a buffer that reduces crystalline defects while allowing the sapphire substrate to provide its high temperature endurance and sturdiness benefits.
Solution Approach 2:
The patent employs a composite structure combining sapphire substrate, aluminum nitride pattern layer, and nitride semiconductor layers. This composite approach leverages the advantages of each material: sapphire for mechanical strength and heat resistance, aluminum nitride for defect reduction and thermal conductivity, and nitride semiconductor for optical performance.
2Power
If the semiconductor structure generates heat during operation, then the device functions normally, but the increased temperature causes deterioration of light emitting efficiency
Solution Approach 1:
The aluminum nitride pattern layer acts as a thermal intermediary with high thermal conductivity, efficiently conducting heat away from the semiconductor structure to the sapphire substrate, thereby maintaining light emitting efficiency during normal operation.
Solution Approach 2:
The patent utilizes materials with appropriate thermal conductivity properties, particularly aluminum nitride which has superior thermal conductivity, to manage heat flow and prevent temperature-related efficiency deterioration in the light emitting device.
3Temperature
If a pattern layer with higher thermal conductivity is introduced to improve heat dissipation, then temperature-related issues are reduced, but the device structure becomes more complex
Solution Approach 1:
The pattern layer is divided into multiple separated patterns rather than a continuous layer. This segmentation reduces the amount of additional material needed, simplifies the fabrication process, and maintains effective thermal conductivity pathways while reducing structural complexity.
Solution Approach 2:
The pattern layer is strategically positioned only in specific regions where heat dissipation is most needed, rather than covering the entire substrate. This localized approach improves heat dissipation effectiveness while minimizing the increase in device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively improves heat dissipation and prevents deterioration of light emitting efficiency by reducing temperature-related issues, ensuring stable growth and enhanced optical output in nitride semiconductor devices.
Implementation Method 1
a thermal conductivity of the pattern layer is higher than a thermal conductivity of the semiconductor substrate and a thermal conductivity of the semiconductor structure
Data Source
AI summary
One embodiment comprises: a semiconductor substrate; a pattern layer disposed on the semiconductor substrate and comprising a plurality of patterns that are spaced apart from each other; a nitride semiconductor layer disposed on the pattern layer; and a semiconductor substrate disposed on the nitride semiconductor layer and comprising a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, wherein the thermal conductivity of the pattern layer is higher than the thermal conductivity of the semiconductor substrate and the thermal conductivity of the semiconductor structure.