Group-III Nitride Semiconductor Intermediate Layer for Crystallinity
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Solution Overview
Problem
Existing methods for manufacturing group-III nitride compound semiconductor light-emitting devices face challenges in achieving high crystallinity and productivity due to large lattice mismatches between substrates and nitride semiconductor crystals, leading to difficulties in forming uniform and high-quality films.
Innovation Solution
A method involving the formation of an intermediate layer using a sputtering technique that activates raw materials in plasma, with a thickness of 20 to 80 nm, to create a hexagonal close-packed structure as an alignment film on the substrate, allowing for the growth of high-crystallinity semiconductor layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a group-III nitride semiconductor crystal is epitaxially grown directly on a substrate, then the manufacturing process is simple, but the crystallinity is low due to large lattice mismatch
Solution Approach 1:
An intermediate layer made of a group-III nitride compound is introduced between the substrate and the semiconductor crystal. This intermediate layer serves as a mediator that reduces the lattice mismatch effect, enabling high-quality crystal growth. The intermediate layer has a hexagonal close-packed structure that provides a suitable template for epitaxial growth, thereby improving crystallinity without significantly complicating the manufacturing process.
2Manufacturing precision
If a buffer layer is formed using MOCVD method, then the crystallinity is improved, but the manufacturing cost and process complexity increase
Solution Approach 1:
The invention changes the formation method parameters from MOCVD to plasma processing (such as sputtering or plasma CVD). This parameter change allows the intermediate layer to be formed with a hexagonal close-packed structure that effectively reduces lattice mismatch. The plasma-based method achieves comparable or better crystallinity improvement while potentially reducing process complexity and cost compared to MOCVD.
3Manufacturing precision
If the thickness of the intermediate layer is increased, then the crystallinity is improved, but the manufacturing time and material consumption increase
Solution Approach 1:
The invention optimizes the thickness parameter of the intermediate layer to a specific range (20-80 nm) where the hexagonal close-packed structure provides sufficient template effect for high-quality crystal growth. This optimized thickness achieves the necessary crystallinity improvement while minimizing manufacturing time and material consumption, thereby maintaining high productivity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the production of group-III nitride compound semiconductor light-emitting devices with improved crystallinity and productivity, achieving efficient emission characteristics while being cost-effective.
Implementation Method 1
A method involving the formation of an intermediate layer using a sputtering technique that activates raw materials in plasma
Implementation Method 2
activates raw materials in plasma
Data Source
AI summary
A group-III nitride compound semiconductor light-emitting device, a method of manufacturing the group-III nitride compound semiconductor light-emitting device, and a lamp. The method includes the steps of: forming an intermediate layer (12) made of a group-III nitride compound on a substrate (11) by activating and reacting gas including a group-V element with a metal material in plasma; and sequentially forming an n-type semiconductor layer (14), a light-emitting layer (15), and a p-type semiconductor layer (16) each made of a group-III nitride compound semiconductor on the intermediate layer (12). Nitrogen is used as the group-V element, and the thickness of the intermediate layer (12) is in the range of 20 to 80 nm.