Nitride Semiconductor Device With Independent Potential Control Regions
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Solution Overview
Problem
In nitride semiconductor devices with multiple lateral transistor structures, potential differences between transistor structures and the conductive substrate can vary, leading to deviations from design characteristics and reduced reliability of the semiconductor circuit.
Innovation Solution
A nitride semiconductor device with a conductive substrate divided into independent potential control regions, where each transistor structure overlaps a corresponding potential control region, allowing for adjusted potential differences between the transistor electrodes and the substrate, ensuring consistent operation across all transistor structures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If multiple lateral transistor structures are built in one nitride semiconductor layer on a conductive substrate, then the semiconductor circuit can be formed, but the potential difference between main electrodes and the conductive substrate varies among transistor structures, causing characteristics to deviate from design values
Solution Approach 1:
The conductive substrate is divided into multiple independent potential control regions, where each region can be controlled at a different potential. This segmentation allows each transistor structure to have its potential difference with the substrate independently adjusted, ensuring that all transistor structures maintain consistent characteristics with the design values despite being built in the same nitride semiconductor layer.
2Reliability
If the conductive substrate is divided into multiple independent potential control regions, then the potential difference can be adjusted for each transistor structure, but the device complexity increases
Solution Approach 1:
Different regions of the conductive substrate are assigned different local potentials through the division into potential control regions. Each region maintains its own electrical characteristics independently, allowing precise control of the potential difference for each transistor structure. This local quality approach ensures that each transistor operates with the correct potential relationship to the substrate, maintaining reliability without requiring complete redesign of the entire device architecture.
Data Source
AI summary
A nitride semiconductor device includes a conductive substrate and a nitride semiconductor layer. The nitride semiconductor layer is disposed on the conductive substrate. The nitride semiconductor layer includes a first transistor structure of a lateral type and a second transistor structure of a lateral type. The conductive substrate includes a first potential control region and a second potential control region capable of controlling potential independently from the first potential control region. In planar view of the nitride semiconductor layer, the first transistor structure overlaps the first potential control region and the second transistor structure overlaps the second potential control region.