Nitride Semiconductor Recesses for Light Extraction
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Solution Overview
Problem
Current semiconductor devices, particularly those using nitride semiconductors, face challenges in enhancing luminous intensity, with existing methods failing to achieve significant improvements.
Innovation Solution
A semiconductor device structure is developed with specific layer configurations and doping concentrations, including a first and second conductive-type semiconductor layer and an active layer, where primary ions are irradiated to emit secondary ions, allowing for precise control of indium, silicon, and carbon concentrations to form recesses that enhance light extraction efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If conventional nitride semiconductor structures are used, then device simplicity is maintained, but luminous intensity is insufficient
Solution Approach 1:
The patent applies local quality by creating recesses with specific geometries (V-shaped, U-shaped, or inverted pyramid) at localized positions within the semiconductor layer. These recesses have different refractive indices and light extraction properties compared to the surrounding flat regions, enabling enhanced light extraction specifically at these locations without modifying the entire device structure.
Solution Approach 2:
The patent introduces vertical dimensionality changes by forming recesses that extend downward from the surface of the semiconductor layer. This creates multiple light extraction pathways at different depths and angles, transforming the traditionally two-dimensional light emission into a three-dimensional extraction process that significantly improves luminous intensity.
2Illumination intensity
If additional components are added to increase luminous intensity, then light extraction efficiency is improved, but device complexity increases
Solution Approach 1:
The patent implements self-service by forming recesses directly within the existing semiconductor layer structure during the fabrication process. The recesses utilize the material's own optical properties and geometric configuration to enhance light extraction, eliminating the need for separate extraction layers, coatings, or additional optical components.
Solution Approach 2:
The patent changes physical parameters by modifying the refractive index distribution through geometric configuration rather than material composition. By varying the depth, width, and shape parameters of the recesses, the light extraction efficiency is optimized without introducing new materials or components, maintaining device simplicity.
3Illumination intensity
If recesses are formed in semiconductor layers, then light extraction efficiency is improved, but manufacturing precision requirements increase
Solution Approach 1:
The patent applies segmentation by dividing the semiconductor layer into multiple regions with different recess configurations. Different areas can have varying recess depths, shapes, and densities, allowing optimization of light extraction for different functional zones while maintaining manufacturability through standardized fabrication processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The structure increases luminous intensity by improving light extraction efficiency and maintaining electrical and optical properties, with the ability to form dual-type recesses that further enhance light output.
Implementation Method 1
When primary ions are irradiated to the first conductive-type semiconductor layer, the active layer, and the second conductive-type semiconductor layer, secondary ions are emitted from the first conductive-type semiconductor layer, the active layer, and the second conductive-type semiconductor layer
Data Source
AI summary
A semiconductor device including first to fourth points defined using In ion intensity, Si concentration, and C concentration obtained from SIMS data. The active layer of the device is a first region between the first point and the second point. In addition, the C concentration in a third region between the third point and the fourth point is higher than the C concentration in a second region adjacent to the fourth region along a second direction. Also, the Si concentration in the second region is higher than the Si concentration in the third region.