Nitride Semiconductor Recesses for Light Extraction
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Solution Overview
Problem
Current semiconductor devices, particularly those using nitride semiconductors, face challenges in enhancing luminous intensity, with existing methods failing to achieve satisfactory improvements.
Innovation Solution
A semiconductor device structure is developed with a specific recess shape, such as a V-pit, formed in the active layer and p-type semiconductor layer, where the indium (In) ion intensity and magnesium (Mg) concentration are carefully controlled to optimize light extraction and deep-hole injection, allowing for precise adjustment of recess size and density to enhance light efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If conventional light-emitting device structures are used, then the device can be manufactured with standard processes, but the luminous intensity remains insufficient and cannot achieve satisfactory improvement
Solution Approach 1:
The patent introduces recesses with specific shapes (V-pit, U-pit, or inverted pyramid) into the light-emitting surface of the active layer, creating localized structural variations. These recesses have different geometries compared to the flat conventional structure, enabling enhanced light extraction efficiency and deep-hole injection effect in specific regions, thereby increasing luminous intensity without fundamentally changing the overall device manufacturing process
Solution Approach 2:
The patent adds vertical depth dimension to the light-emitting surface by forming recesses that extend into the active layer. This three-dimensional structural modification creates additional light extraction pathways and enhances the deep-hole injection effect, transforming the conventional two-dimensional planar structure into a three-dimensional structured surface that improves luminous output
2Illumination intensity
If recesses are introduced to improve light extraction and deep-hole injection, then luminous intensity increases, but the device structure becomes more complex requiring precise control of recess shape and dopant concentration
Solution Approach 1:
The patent optimizes specific parameters including recess depth (0.1-1.0 μm), recess width at top surface (0.5-2.0 μm), and dopant concentration gradients (Mg concentration from 1×10^18 to 1×10^20 atoms/cm³). By precisely controlling these parameters during the manufacturing process, the recess structure achieves enhanced light extraction and deep-hole injection effects while maintaining manufacturability through standardized process techniques
3Illumination intensity
If dopant concentration is increased to enhance deep-hole injection, then light extraction efficiency improves, but operation voltage increases
Solution Approach 1:
The patent implements a non-uniform dopant concentration distribution within the recess regions, with higher Mg concentration (1×10^19 to 1×10^20 atoms/cm³) localized in the recess areas to enhance deep-hole injection effect, while maintaining lower dopant concentration in the surrounding matrix region. This localized doping strategy improves light extraction efficiency in the recess regions without significantly increasing the overall operation voltage of the device
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The controlled recess shape and dopant concentration enable improved light extraction and deep-hole injection, resulting in increased luminous intensity and efficiency, maximizing light output while minimizing operation voltage.
Implementation Method 1
When primary ions are irradiated to the first conductive-type semiconductor layer, the active layer, and the second conductive-type semiconductor layer, secondary ions are emitted from the first conductive-type semiconductor layer, the active layer, and the second conductive-type semiconductor layer
Data Source
AI summary
A semiconductor device can define a plurality of points on the basis of an In ion concentration, a first dopant concentration, and a second dopant concentration, and identify each layer on the basis of a region between the points defined as above. The Mg concentration in a specific layer may increase along a specific direction and then decrease.