Nitride Semiconductor Device Si-Plasma Surface Denatured Layer
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Solution Overview
Problem
Conventional methods for fabricating nitride semiconductor devices fail to achieve both low-resistance ohmic properties and high adhesion between the nitride semiconductor substrate and metal electrodes, often requiring high-temperature thermal treatment which can deteriorate device characteristics or result in varying electric properties over time.
Innovation Solution
A nitride semiconductor device with a Si-containing surface denatured layer formed by reacting the substrate with a Si-containing plasma, providing a carrier supply layer between the substrate and the metal electrode, which enhances low-resistance ohmic properties and adhesion without the need for high-temperature thermal treatment.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If high-temperature thermal treatment is applied after electrode deposition, then low-resistance ohmic properties are achieved, but adhesion deteriorates and device characteristics are compromised
Solution Approach 1:
The patent applies preliminary plasma treatment to the substrate surface before electrode deposition to create a denatured layer with improved surface properties. This preliminary action modifies the surface to enhance both adhesion and ohmic properties, eliminating the need for subsequent high-temperature thermal treatment that would otherwise be required to achieve low-resistance contact.
Solution Approach 2:
The patent introduces a plasma-denatured surface layer as an intermediary between the substrate and the electrode. This intermediate layer, created by plasma treatment, serves as a mediator that simultaneously improves adhesion to the substrate and provides low-resistance ohmic contact properties, resolving the contradiction between adhesion strength and ohmic performance.
2Strength
If low-temperature assembly is used to avoid thermal treatment, then adhesion is maintained, but ohmic properties deteriorate with time due to heat generation during operation
Solution Approach 1:
The plasma treatment creates a denatured surface layer in advance that is specifically designed to maintain stable ohmic properties under operational conditions. This preliminary surface modification ensures that the electrode contact remains low-resistance even when heat is generated during device operation, without requiring high-temperature thermal treatment during assembly.
3Strength
If acid treatment or specific electrode structures are applied to improve adhesion, then adhesion is enhanced, but manufacturing complexity increases and low resistance may be deteriorated
Solution Approach 1:
The plasma-denatured surface layer serves as an intermediary that simultaneously addresses adhesion and ohmic properties without requiring complex multi-step processes. The plasma treatment creates a surface modification that inherently provides both improved adhesion and low-resistance contact, eliminating the need for separate acid treatment steps or complex electrode structure designs.
Solution Approach 2:
The patent changes the surface parameters of the substrate through plasma treatment, creating a denatured layer with modified surface properties. This parameter change in the surface state achieves both improved adhesion and low-resistance ohmic properties, avoiding the need for additional process steps or complex electrode structures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution stabilizes low-resistance ohmic properties and high adhesion, reducing contact resistance and maintaining performance across temperature variations, thus enabling more reliable and efficient nitride semiconductor devices with improved operational stability and power output.
Implementation Method 1
causing the second main surface to react with a first material that contains Si
Implementation Method 2
denaturing the second main surface of the nitride semiconductor substrate by causing the second main surface to react with a first material that contains Si
Implementation Method 3
achieve low-resistance ohmic properties and high adhesion between the nitride semiconductor substrate and the metal electrode layer
Data Source
AI summary
A nitride semiconductor device and its manufacturing method are provided which are capable of achieving low-resistance ohmic properties and high adhesion. A nitride semiconductor device has an n-type GaN substrate over which a semiconductor element is formed and an n-electrode as a metal electrode formed over the back surface of the GaN substrate. A surface denatured layer functioning as a carrier supply layer is provided between the GaN substrate and the n-electrode. The surface denatured layer is formed by denaturing the back surface of the GaN substrate by causing it to react with a material that contains silicon.