Nitride Semiconductor Chip Separation via Side Grooves

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Solution Overview

Problem

Nitride-based semiconductor devices, such as light-emitting devices and electronic devices, face defects during the manufacturing process of forming dividing grooves, which reduce luminous efficiency and lead to abnormal heat generation, thereby shortening the device's lifespan.

Innovation Solution

A nitride-based semiconductor device with side surfaces formed by crystal growth facets, specifically a (000-1) plane and {A+B, A, −2A−B, 2A+B} plane, which avoids defects caused by etching, mechanical scribing, or laser scribing, allowing for improved flatness and reduced surface energy, enabling efficient light emission and heat management.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If dividing grooves are formed by etching, mechanical scribing, or laser scribing, then the semiconductor layer can be separated into chips, but defects are caused on the semiconductor layer reducing luminous efficiency and generating abnormal heat

Engineering Contradiction:

Improvechip separation efficiencyVSAvoidsemiconductor layer quality

Core Design Contradiction:

ProductivityVSReliability

Solution Approach 1:

The invention divides the semiconductor layer into individual chips by forming separating grooves that extend from the side surfaces toward the main surface, but do not reach it. This segmentation approach allows chip separation while preserving the integrity of the emission layer, as the grooves are confined to lower layers and do not penetrate into the critical emission region.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

Instead of forming grooves from the main surface downward (vertical dimension), the invention forms grooves from the side surfaces inward (lateral dimension). This dimensional change allows separation without compromising the emission layer quality, as the grooves approach but do not reach the main surface where the emission layer resides.

Inventive Principle:

Principle #17Another dimension (Dimensionality change)

2Productivity

If dividing grooves are formed to separate chips, then chip production is enabled, but luminous efficiency is reduced due to defects in the emission layer

Engineering Contradiction:

Improvechip production capabilityVSAvoidluminous efficiency

Core Design Contradiction:

ProductivityVSUse of energy by moving object

Solution Approach 1:

The semiconductor structure is segmented into individual chips through side-wall grooves that partition the device without penetrating the emission layer. This allows mass production while preserving the optical quality necessary for high luminous efficiency.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The separating grooves are formed in advance during the crystal growth process itself, before chip separation occurs. This preliminary action ensures that the grooves are precisely positioned and do not compromise the emission layer, maintaining luminous efficiency while enabling subsequent chip production.

Inventive Principle:

Principle #10Preliminary action

3Ease of manufacture

If conventional chip separation methods are used, then manufacturing process is established, but abnormal heat is generated reducing device lifespan

Engineering Contradiction:

Improvemanufacturing process feasibilityVSAvoiddevice lifespan

Core Design Contradiction:

Ease of manufactureVSDuration of action of stationary object

Solution Approach 1:

The device is segmented into chips through controlled groove formation that stops before reaching the emission layer. This maintains manufacturing feasibility while eliminating the heat-generating defects that would otherwise reduce device lifespan.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The invention converts the potentially harmful effect of groove formation into a beneficial outcome by carefully controlling groove depth and position. The grooves enable chip separation (useful function) while their controlled termination before the emission layer prevents defect formation, thus converting a potentially harmful process into a beneficial manufacturing method that extends device lifespan.

Inventive Principle:

Principle #22Blessing in disguise (Convert harm into benefit)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution prevents defects in the semiconductor layer, enhancing luminous efficiency and extending the device's lifespan by reducing abnormal heat generation and maintaining flatness during crystal growth.

Implementation Method 1

a first side surface of a (000-1) plane which starts from a first side wall of the first step portion and a second side surface starting from a second side wall of the second step portion on the main surface

Methodology Applied

Scientific EffectCrystal growth: Crystallisation

Data Source

PatentUS8022427B2Nitride-based semiconductor device and method of manufacturing the same

Publication Date: 2011.09.20 LEDVANCE GMBH

AI summary

A nitride-based semiconductor device includes a substrate, a first step portion formed on a main surface side of a first side end surface of the substrate, a second step portion formed on the main surface side of a second side end surface substantially parallel to the first side end surface on an opposite side of the first side end surface and a nitride-based semiconductor layer whose first side surface is a (000-1) plane starting from a first side wall of the first step portion and a second side surface starting from a second side wall of the second step portion on the main surface.