Nitride Semiconductor Device Substrate Transfer
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Solution Overview
Problem
The existing methods for manufacturing nitride semiconductor devices, particularly those using a silicon substrate, face challenges in improving manufacturing yield due to high serial resistance and poor heat dissipation, especially when using sapphire substrates for crystal growth.
Innovation Solution
The method involves removing a growth substrate from a structure body with a nitride semiconductor layer and a buffer layer, and then reducing the thickness of these layers using different treatment materials to transfer the nitride semiconductor layer onto a conductive and thermally conductive support substrate, such as silicon, which reduces serial resistance and enhances heat dissipation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a sapphire substrate is used for crystal growth, then the nitride semiconductor layer can be grown, but the serial resistance is high and heat dissipation is poor
Solution Approach 1:
The patent introduces a buffer layer as an intermediary between the sapphire substrate and the nitride semiconductor layer. This buffer layer serves as a transition medium that reduces the harmful effects of direct contact between the nitride semiconductor and sapphire substrate, thereby reducing serial resistance and improving heat dissipation while maintaining the ability to grow the nitride semiconductor layer on the sapphire substrate.
Solution Approach 2:
The patent changes the structural parameters of the device by introducing additional layers (buffer layer and semiconductor layer) between the sapphire substrate and the functional regions. This parameter change transforms the direct sapphire-semiconductor interface into a multi-layer structure, which modifies the electrical and thermal properties to reduce serial resistance and improve heat dissipation.
2Ease of manufacture
If the nitride semiconductor layer is grown directly on the silicon substrate, then the manufacturing process is simplified, but the manufacturing yield needs to be improved
Solution Approach 1:
The patent performs preliminary actions by forming a buffer layer and controlling the crystal growth process before the main nitride semiconductor layer is completed. This preliminary structuring ensures proper interface formation and reduces defects early in the process, which improves manufacturing yield while maintaining the overall simplicity of using a silicon substrate.
Solution Approach 2:
The patent optimizes growth parameters such as temperature, pressure, and gas flow during the crystal growth process to improve manufacturing yield. By carefully controlling these parameters, the patent achieves high-yield production while maintaining the ease of using silicon substrates and straightforward manufacturing processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves the manufacturing yield and performance of nitride semiconductor devices by reducing serial resistance and enhancing heat dissipation, allowing for efficient current flow and improved light emitting performance.
Implementation Method 1
removing a growth substrate from a structure body by using a first treatment material
Implementation Method 2
reducing thicknesses of the buffer layer and the nitride semiconductor layer by using a second treatment material different from the first treatment material
Implementation Method 3
transfer the nitride semiconductor layer onto a conductive and thermally conductive support substrate, such as silicon, which reduces serial resistance and enhances heat dissipation
Implementation Method 4
transfer the nitride semiconductor layer onto a conductive and thermally conductive support substrate, such as silicon, which reduces serial resistance and enhances heat dissipation
Data Source
AI summary
According to one embodiment, a method is disclosed for manufacturing a nitride semiconductor device. The method can include removing a growth substrate from a structure body by using a first treatment material. The structure body has the growth substrate, a buffer layer formed on the growth substrate, and the nitride semiconductor layer formed on the buffer layer. A support substrate is bonded to the nitride semiconductor layer. The method can include reducing thicknesses of the buffer layer and the nitride semiconductor layer by using a second treatment material different from the first treatment material after removing the growth substrate.