T-Shaped Gate Nitride Semiconductor Device Insulation
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Solution Overview
Problem
Existing nitride semiconductor devices, particularly high voltage breakdown devices, face challenges in achieving optimal gate electrode structure and insulation to minimize leak current and prevent dielectric breakdown, especially when using silicon nitride as an insulating layer.
Innovation Solution
A nitride semiconductor device with a T-shaped gate electrode and an insulating layer having a steeply rising sidewall and a transition portion to a thicker flat surface, formed through epitaxial growth and precise etching of the semiconductor lamination layer, ensuring effective contact and reduced residue formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional gate electrode structure with uniform insulating layer thickness is used, then the manufacturing process is simple, but leak current increases and dielectric breakdown occurs
Solution Approach 1:
The insulating layer is designed with non-uniform thickness, featuring a first thickness in the gate electrode contact area and a second thickness (greater than the first) in areas spaced apart from the contact area. This local variation in thickness provides enhanced insulation where needed while maintaining adequate insulation elsewhere, effectively reducing leak current and preventing dielectric breakdown without requiring complete structural redesign
Solution Approach 2:
The insulating layer incorporates a stepped configuration with a first stepped surface and a second stepped surface at different height levels. This vertical dimensionality change creates distinct thickness zones within the same horizontal plane, allowing the structure to achieve both low leak current (through thinner regions near contact areas) and high breakdown resistance (through thicker regions in spaced areas) simultaneously
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution significantly reduces leak current and prevents dielectric breakdown by ensuring a robust gate electrode structure and adequate insulation, enhancing the device's operational reliability and efficiency.
Implementation Method 1
a substrate being capable of epitaxially growing a nitride semiconductor layer thereon
Data Source
AI summary
A nitride semiconductor device has: a substrate; a semiconductor lamination formed on the substrate, and including a channel layer of nitride semiconductor; source and drain electrodes formed on the semiconductor lamination in ohmic contact with the channel layer; an insulating layer formed on the semiconductor lamination, and having an opening in a gate electrode contact area, a total thickness portion having a flat surface and a total thickness in an area spaced apart from the opening, and a transient portion with monotonically changing thickness between the opening and the total thickness portion, a sidewall of the insulating layer facing the opening rising steeply to a partial thickness of the total thickness; and a T-shaped gate electrode contacting the semiconductor lamination layer in the opening and extending on the insulating film to portions with increased thickness thicker than the partial thickness.