Nitride Semiconductor Light Emitting Device V-Shaped Recess
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Solution Overview
Problem
Conventional nitride semiconductor light emitting devices face challenges in achieving high carrier recombination efficiency and electrical passivation due to non-uniform impurity doping and resistance issues in the intermediate layers, particularly in the V-shaped recesses.
Innovation Solution
A nitride semiconductor light emitting device is designed with a V-shaped recess in the first conductive semiconductor layer, where an active layer is formed conforming to this shape, and intermediate layers with varying impurity concentrations are used to suppress lateral growth and ensure uniform doping, resulting in improved electrostatic resistivity and carrier recombination efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a single intermediate layer is used in the V-shaped recess, then the device structure is simpler, but the impurity doping is non-uniform and electrostatic resistivity is poor
Solution Approach 1:
The intermediate layer is divided into two distinct layers: a first intermediate layer with higher impurity concentration and a second intermediate layer with lower impurity concentration. This segmentation allows each layer to perform different functions - the first layer provides strong electrostatic passivation at the active layer interface, while the second layer fills the V-shaped recess and provides uniform doping, collectively resolving the contradiction between reliability and structural complexity.
Solution Approach 2:
Different regions of the intermediate layer structure are assigned different impurity concentrations tailored to local requirements. The first intermediate layer has higher impurity concentration near the active layer where strong passivation is needed, while the second intermediate layer has lower concentration in the recess region where uniform doping is critical. This local quality differentiation optimizes electrostatic resistivity without excessive complexity.
2Reliability
If impurity concentration is increased to improve carrier recombination efficiency, then recombination efficiency improves, but lateral growth of the intermediate layer increases
Solution Approach 1:
The intermediate layer is segmented into two layers with different impurity concentrations. The first intermediate layer has higher impurity concentration to enhance carrier recombination efficiency, while the second intermediate layer has lower concentration to suppress lateral growth and maintain proper layer shape. This segmentation resolves the contradiction between recombination efficiency and shape control.
Solution Approach 2:
High impurity concentration is applied locally in the first intermediate layer where carrier recombination is needed, while the second intermediate layer uses lower concentration to control lateral growth. This localized quality differentiation allows simultaneous optimization of recombination efficiency and shape control in different regions.
Data Source
AI summary
A semiconductor light emitting device includes a first conductive semiconductor layer including a V-shaped recess in a cross-sectional view. An active layer is disposed on the first conductive semiconductor layer, conforming to the shape of the V-shaped recess. An intermediate layer is disposed on the active layer and is doped with a first impurity. A second conductive semiconductor layer is disposed on the intermediate layer. The intermediate layer includes a first intermediate layer and a second intermediate layer. The first intermediate layer is disposed on the active layer, conforming to the shape of the V-shape recess. The second intermediate layer is disposed on the first intermediate layer and includes a protrusion to fill the V-shaped recess.