Nitride Semiconductor Light Emitting Device With V-Shaped Pits

The device is divided into multiple functional layers including a first superlattice layer, a pit forming layer with V-shaped pits, a second superlattice layer, and an active layer. Each layer serves a specific function: the superlattice layers manage dislocations, the V-shaped pits reduce leakage current, and the active layer generates light. This segmentation allows each component to address specific issues independently, improving overall light emission efficiency while maintaining manageable complexity through functional specialization.

The pit forming layer introduces V-shaped pits with specific local geometric features that create favorable electric field distributions in localized regions. These V-shaped pits have different properties from the surrounding planar regions, creating local quality variations that redirect leakage current and reduce carrier loss. The local geometric modification addresses leakage current issues without requiring complete structural redesign of the entire device.

The V-shaped pits are formed through self-organized processes during the growth of the pit forming layer, rather than requiring precise external patterning. The growth conditions and material properties naturally lead to the formation of V-shaped pits with appropriate dimensions and orientations. This self-service approach reduces the need for high-precision external manufacturing processes while still achieving the desired leakage current reduction effect.

The depth, width, and angle of the V-shaped pits are controlled by adjusting growth parameters such as temperature, pressure, and precursor flow rates during the formation process. By changing these parameters, the pit dimensions can be optimized to achieve effective leakage current reduction without requiring extremely tight tolerances. The parameter changes allow flexible control over pit geometry to balance performance and manufacturability.