Nitride Substrate Inspection Using Band-Edge Peak Width
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Solution Overview
Problem
The quality uniformity of semiconductor devices produced from Group-III element nitride substrates is often insufficient, leading to a demand for improving yield and reducing defects such as leakage current in high-electron-mobility transistor (HEMT) devices.
Innovation Solution
A method involving the inspection of Group-III element nitride substrates by irradiating them with excitation energy, such as ultraviolet light or an electron beam, and measuring the half width of the band-edge emission peak in the emission spectrum. This process allows for the selection of substrates with optimal properties for semiconductor device production.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If Group-III element nitride substrates are used for semiconductor device production, then high resistance and wide bandgap properties are achieved, but quality uniformity is insufficient
Solution Approach 1:
The patent applies preliminary action by performing inspection of Group-III element nitride substrates before semiconductor device production. The inspection method measures the half width of band-edge emission peaks to identify substrates with appropriate properties in advance, ensuring quality uniformity and reducing defects in subsequent device fabrication processes.
2Strength
If substrates with high resistance are used, then dielectric breakdown field is improved, but quality uniformity deteriorates
Solution Approach 1:
The patent applies parameter changes by measuring the half width of band-edge emission peaks as a critical parameter to identify substrates with appropriate properties. By monitoring this spectral parameter, the method ensures that substrates with high resistance and improved dielectric breakdown field also maintain quality uniformity, resolving the contradiction between these two properties.
3Productivity
If conventional inspection methods are used, then production speed is maintained, but defect detection capability is insufficient
Solution Approach 1:
The patent replaces conventional mechanical or contact-based inspection methods with optical measurement techniques. By measuring the half width of band-edge emission peaks through optical spectroscopy, the method achieves superior defect detection capability while maintaining production speed, as the optical inspection can be performed rapidly without physical contact or complex sample preparation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed method enhances the quality uniformity of semiconductor devices by identifying substrates with suitable half widths of the band-edge emission peak, thereby reducing defects and improving yield in semiconductor device production.
Implementation Method 1
irradiating the Group-III element nitride substrate with excitation energy; and measuring a half width of a band-edge emission peak of an emission spectrum obtained by the irradiation
Implementation Method 2
the irradiating the Group-III element nitride substrate with the excitation energy may be performed by irradiation with at least one of ultraviolet light or an electron beam
Data Source
AI summary
Provided is a method of inspecting a Group-III element nitride substrate, the method including: preparing a Group-III element nitride substrate doped with an element except a Group-III element; irradiating the Group-III element nitride substrate with excitation energy; and measuring a half width of a band-edge emission peak of an emission spectrum obtained by the irradiation.