Nitride Semiconductor Layer Support Structure for Crack-Free Polishing
Solution Overview
Problem
The increasing load on semiconductor layers during polishing can lead to surface cracking or chipping, as existing technologies fail to effectively reduce the stress on the layers while maintaining surface smoothness.
Innovation Solution
A manufacturing method involving the formation of islands with a nitride semiconductor layer and a support on a sapphire substrate, followed by joining the support to a retention substrate via an adhesive member, peeling off the layer using laser light, and polishing the surface with the support in place to distribute and absorb the polishing load.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the flatness of the semiconductor layer surface is improved, then the polishing quality is enhanced, but the load (stress) acting on the semiconductor layer during polishing increases
Solution Approach 1:
A support layer is introduced as an intermediary between the semiconductor layer and the polishing pad. This support layer has lower rigidity than the semiconductor layer, allowing it to absorb and distribute the polishing load, thereby reducing stress on the semiconductor layer while still enabling effective surface flattening
Solution Approach 2:
The patent uses a composite structure consisting of the semiconductor layer and the support layer with different mechanical properties. The support layer is specifically designed with lower rigidity to create a compliant interface that reduces stress concentration during polishing, while the combination achieves both surface flatness improvement and load reduction
2Device complexity
If polishing is performed directly on the semiconductor layer, then the process is simple, but cracking or chipping occurs on the layer surface
Solution Approach 1:
The support layer is formed on the semiconductor layer before the polishing process to provide cushioning and stress distribution. This preliminary protective measure prevents cracking and chipping during polishing by absorbing mechanical stresses before they reach the semiconductor layer
Solution Approach 2:
The support layer serves as a protective intermediary that interfaces between the polishing mechanism and the semiconductor layer, preventing direct contact and stress concentration that would cause surface damage while maintaining process feasibility
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method reduces the load on the semiconductor layer during polishing, preventing cracking and chipping while achieving a smooth surface with surface roughness less than or equal to 10 nm, thereby enhancing the semiconductor layer's integrity and performance.
Implementation Method 1
peeling off the semiconductor layer from the sapphire substrate by irradiating the semiconductor layer with laser light
Data Source
Figure 1
Figure 2(A)~2(B)
Figure 3
AI summary
A manufacturing method of a semiconductor element includes a formation process of forming a plurality of islands, each including a semiconductor layer (12) containing a nitride semiconductor and a support (13) formed on the semiconductor layer (12), on a sapphire substrate (11), a joining process of joining the support (13) to a retention substrate (15) via an adhesive member (14), a peeling process of peeling off the semiconductor layer (12) from the sapphire substrate (11) by irradiating the semiconductor layer (12) with laser light, and a polishing process of polishing a surface (12s) of the semiconductor layers (12) peeled off from the sapphire substrate (11) .