Nitride Semiconductor Template Two-Layer Annealing
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Solution Overview
Problem
Conventional annealing methods for nitride semiconductor templates are inefficient and can deteriorate the surface state of the nitride semiconductor film, leading to high dislocation densities and crack issues, especially when trying to increase the substrate diameter and transparency.
Innovation Solution
A method involving the formation of a two-layer nitride semiconductor structure, where a first layer is epitaxially grown on a substrate and then annealed in an inert gas atmosphere to reduce dislocations, followed by a second layer grown using vapor phase epitaxy, optimizing the surface quality and reducing dislocation densities.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional annealing methods are applied to improve nitride semiconductor film quality, then dislocation density is reduced, but surface state deteriorates and crack formation increases
Solution Approach 1:
The patent divides the nitride semiconductor layer into two distinct layers: a first layer (buffer layer) that undergoes annealing to reduce dislocations, and a second layer that maintains good surface state. This segmentation allows each layer to serve its specific function without compromising the other, resolving the contradiction between dislocation reduction and surface quality maintenance.
Solution Approach 2:
The patent applies different processing conditions to different regions/layers of the nitride semiconductor structure. The first layer receives annealing treatment optimized for dislocation reduction, while the second layer is grown under conditions optimized for surface quality. This local differentiation of processing conditions allows simultaneous achievement of low dislocation density and good surface state.
2Productivity
If annealing efficiency is improved by changing processing conditions, then dislocation reduction is enhanced, but surface state deteriorates
Solution Approach 1:
By segmenting the nitride semiconductor layer into two layers with different functions, the patent enables efficient annealing of the first layer without compromising the surface state of the second layer. The first layer acts as a sacrificial buffer that can undergo aggressive annealing treatment.
Solution Approach 2:
The first layer serves as an intermediary between the substrate and the second layer. It absorbs the stress and damage from annealing processing, protecting the second layer from surface deterioration while still allowing dislocation reduction to occur in the overall structure.
3Area of stationary object
If substrate diameter is increased to improve template quality, then larger area is obtained, but crack formation increases
Solution Approach 1:
The two-layer structure segments the mechanical stress distribution across the substrate. The first layer, being annealed, has reduced dislocation density and can better accommodate thermal and mechanical stress, allowing larger substrate diameters without increasing crack formation.
Solution Approach 2:
The patent changes the structural parameters of the nitride semiconductor layer by creating a two-layer configuration with different thicknesses and properties. This parameter change improves the overall mechanical strength and stress distribution, enabling larger substrate diameters while maintaining crack resistance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the efficient production of high-quality nitride semiconductor templates with reduced dislocation densities and improved surface smoothness, allowing for larger substrate diameters and reduced crack formation, while avoiding the need for separate annealing apparatuses and minimizing impurity mixing.
Implementation Method 1
applying annealing to the first layer in an inert gas atmosphere
Implementation Method 2
forming a second layer by epitaxially growing a nitride semiconductor containing aluminum on the first layer by a vapor phase growth
Implementation Method 3
forming a second layer by epitaxially growing a nitride semiconductor containing aluminum on the first layer by a vapor phase growth
Data Source
AI summary
There is provided a method for manufacturing a nitride semiconductor template constituted by forming a nitride semiconductor layer on a substrate, comprising: (a) forming a first layer by epitaxially growing a nitride semiconductor containing aluminum on the substrate; (b) applying annealing to the first layer in an inert gas atmosphere; and (c) forming a second layer by epitaxially growing a nitride semiconductor containing aluminum on the first layer by a vapor phase growth after performing (b), and constituting the nitride semiconductor layer by the first layer and the second layer.