Nitride Semiconductor TGV Etching Without Vacuum Chamber Transfer
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Solution Overview
Problem
Existing methods for forming TGV structures in nitride-based semiconductor devices face challenges such as reduced yield rates due to peeling and process variations when transitioning between different chambers, leading to structural damage and instability.
Innovation Solution
A method involving sequential reactive-ion etching processes using different halogen-based gases in the same chamber to form a nitride-based semiconductor device, ensuring process stability by maintaining a consistent environment without vacuum relief, resulting in a conductor filling with oblique inner sidewalls suitable for TGV structures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If multiple etching chambers are used to remove oxide structure and epitaxy structure separately, then each etching process can be optimized independently, but process variations and structural damage occur during vacuum relief transitions
Solution Approach 1:
The patent combines multiple etching processes (oxide removal and epitaxy structure removal) into a single etching chamber. This allows continuous processing without vacuum relief transitions, eliminating the structural damage and process variations that occur during chamber transitions. The merged chamber approach maintains consistent processing conditions throughout the entire etching sequence.
Solution Approach 2:
The patent implements continuous etching processing without interrupting the vacuum environment. By performing oxide structure removal and epitaxy structure removal in sequence within the same chamber, the useful action of etching continues uninterrupted, avoiding the harmful vacuum relief transitions that cause structural damage and yield reduction.
2Ease of manufacture
If vacuum relief is performed between etching processes, then chamber maintenance and gas exchange are enabled, but structural damage and yield rate reduction occur
Solution Approach 1:
The patent eliminates vacuum relief interruptions during the etching sequence by performing all etching operations in a single continuous vacuum environment. This continuity prevents structural damage to the TGV structures and maintains high yield rates, while the chamber is designed to handle gas exchange without breaking vacuum during the critical etching process.
3Manufacturing precision
If different halogen-based gases are used for removing oxide structure and epitaxy structure, then selective etching is achieved, but process complexity increases
Solution Approach 1:
The patent merges the delivery of different halogen-based gases into a single etching chamber system. This allows selective etching of oxide structure followed by epitaxy structure without requiring separate chambers, reducing overall system complexity while maintaining the benefits of gas-specific selectivity for each material layer.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances process stability and reduces process variations, improving the yield rate and structural integrity of TGV structures by maintaining uniform etching conditions across multiple stages.
Implementation Method 1
A first reactive-ion etching process is performed in the chamber by using a first halogen-based gas to remove the exposed portion of the oxide structure
Implementation Method 2
A second reactive-ion etching process is performed in the chamber by using a second halogen-based gas different than the first halogen-based gas to remove the exposed portion of the epitaxy structure
Data Source
AI summary
A method for manufacturing a nitride-based semiconductor device is provided. The method includes steps as follows. An epitaxy structure is formed on a silicon-based substrate. An oxide structure is formed on the epitaxy structure. A mask layer having an opening is formed on the epitaxy structure such that at least one portion is exposed from the opening in a chamber. A first halogen-based gas is introduced into the chamber to remove the exposed portion of the oxide structure such that a portion of the epitaxy structure is exposed. A second halogen-based gas different than the first halogen-based gas is introduced into the chamber to remove the exposed portion of the epitaxy structure such that a portion of the silicon-based substrate is exposed.