Nitrided 2D Interconnect Barrier for Lower Contact Resistance
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Solution Overview
Problem
Advanced IC technology nodes face challenges with increased contact resistance in multilayer interconnects due to shrinking critical dimensions, leading to performance degradation and cost issues, as conventional barrier layers hinder miniaturization and increase resistance values.
Innovation Solution
A two-dimensional material is used as a barrier layer, undergoing nitridation to form a transition metal nitride material with reduced thickness, enhancing trench/via space for metal filling and decreasing contact resistance, while maintaining conductivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional barrier layers are used in multilayer interconnects, then interconnect structure can be formed, but contact resistance increases and critical dimensions cannot be shrunk
Solution Approach 1:
The patent applies parameter changes by transitioning the barrier layer material from conventional thick barrier materials to ultra-thin two-dimensional materials (such as transition metal dichalcogenides). This material parameter change enables the barrier layer thickness to be reduced to sub-nanometer scales while maintaining or improving electrical conductivity, thereby resolving the contradiction between shrinking critical dimensions and maintaining low contact resistance
Solution Approach 2:
The patent employs composite materials by combining two-dimensional material barrier layers with copper interconnect structures. The 2D material layer serves as both barrier and conductive component, creating a composite structure that simultaneously provides diffusion barrier functionality and low-resistance electrical conduction, thus solving the contradiction between barrier performance and contact resistance
2Productivity
If conventional barrier layers are used, then interconnect structure can be formed, but device miniaturization is hindered and RC delay increases
Solution Approach 1:
The patent implements parameter changes by fundamentally altering the barrier layer thickness parameter from conventional scales (tens of nanometers) to ultra-thin scales (sub-nanometer to few nanometers). This dramatic thickness reduction increases the available space for metal filling in trenches and vias, enabling continued device miniaturization while reducing resistance and RC delay
Solution Approach 2:
The patent replaces the conventional mechanical/physical barrier layer system with a two-dimensional material system that exhibits unique electronic properties. This substitution allows the barrier layer to function not just as a physical barrier but also as a low-resistance conductive path, thereby reducing RC delay while enabling miniaturization
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The nitrided 2D material barrier layer effectively shrinks critical dimensions without sacrificing interconnect conductivity, improving device reliability and enabling miniaturization while reducing RC delay and improving device performance.
Implementation Method 1
performing a nitridation treatment on the 2D material layer to form a nitrided 2D material layer
Data Source
AI summary
Provided are an interconnect structure and a method of forming the same. The method includes: forming an opening in a dielectric layer; forming a 2D material layer to conformally cover a surface of the opening; performing a nitridation treatment on the 2D material layer to form a nitrided 2D material layer; forming a metal layer on the nitrided 2D material layer and filling in the opening; and performing a planarization process on the metal layer and the nitrided 2D material layer to expose a top surface of the dielectric layer.