Nitrided Dielectric Layers for Etch-Resistant Semiconductor Contacts
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Solution Overview
Problem
The semiconductor industry faces challenges in enhancing the etch resistance of dielectric layers in semiconductor devices, which leads to damage during subsequent processing, unwanted material deposition, and shorts between contacts, ultimately resulting in device defects.
Innovation Solution
The implementation of nitridation or densification processes on dielectric layers, such as interlayer dielectrics, using nitrogen plasma, ammonia, or hydrogen plasma, and ultraviolet treatment to improve etch resistance, prevent damage, and reduce defects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If standard dielectric layers are deposited without nitridation or densification, then the manufacturing process is simpler and faster, but the etch resistance is inadequate leading to damage and shorts
Solution Approach 1:
The patent applies nitridation or densification processes to dielectric layers before subsequent etching operations. This preliminary treatment modifies the dielectric layer properties in advance, creating a more resistant structure that can withstand later processing steps, thereby preventing damage and shorts without requiring complex real-time monitoring or adjustment mechanisms
Solution Approach 2:
The patent changes the physical and chemical parameters of dielectric layers through nitridation (introducing nitrogen) or densification (increasing density). These parameter changes fundamentally alter the etch resistance property of the dielectric material, enabling it to withstand subsequent processing without requiring additional protective structures or processes
2Reliability
If nitridation or densification processes are applied to dielectric layers, then etch resistance improves and damage is prevented, but the manufacturing process becomes more complex and time-consuming
Solution Approach 1:
The patent combines nitridation and densification treatments into integrated process flows that can be performed in sequence or combination. By merging these treatments into a coordinated sequence rather than separate independent steps, the overall processing time is optimized while still achieving the necessary etch resistance improvement and device reliability
Solution Approach 2:
The patent optimizes processing parameters such as temperature, pressure, and exposure time for nitridation and densification treatments. By carefully controlling these parameters, the treatments achieve effective etch resistance improvement in reduced timeframes, balancing quality requirements with manufacturing efficiency
3Productivity
If dielectric layers are not treated with nitridation or densification, then the manufacturing process is faster, but damage occurs and shorts form between contacts
Solution Approach 1:
The patent applies nitridation or densification treatments as preliminary anti-actions that prevent harmful effects before they can occur. By pre-treating dielectric layers to enhance etch resistance, the process creates a protective effect that prevents damage and short formation during subsequent etching and processing steps, eliminating the need for corrective actions later
Solution Approach 2:
The patent modifies dielectric layer parameters through nitridation (nitrogen incorporation) or densification (density increase) to fundamentally change the material's resistance to damage. These parameter changes create an inherently more robust structure that prevents shorts and damage without requiring additional protective layers or slower processing speeds
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
These processes significantly enhance the etch resistance of dielectric layers, reducing damage and defects in semiconductor devices, and preventing shorts between contacts, thereby improving the reliability and performance of semiconductor devices.
Implementation Method 1
performing a nitridation treatment on the first dielectric layer to form a treated region and an untreated region in the first dielectric layer, the treated region having a first nitrogen concentration greater than a second nitrogen concentration of the untreated region
Implementation Method 2
Precursors for the nitridation processes may include nitrogen (N2), ammonia (NH3), combinations thereof, or the like
Implementation Method 3
In embodiments in which densification processes are performed, the densification processes may include exposing the dielectric layers to a hydrogen plasma or exposing the dielectric layers to radiation, such as an ultraviolet (UV) treatment
Data Source
AI summary
Methods of forming improved dielectric layers and semiconductor devices formed by the same are disclosed. In an embodiment, a semiconductor device includes a transistor structure on a semiconductor substrate; a first dielectric layer on the transistor structure; a second dielectric layer on the first dielectric layer, the second dielectric layer having a nitrogen concentration greater than a nitrogen concentration of the first dielectric layer; a first conductive structure extending through the second dielectric layer and the first dielectric layer, the first conductive structure being electrically coupled to a first source/drain region of the transistor structure, a top surface of the first conductive structure being level with a top surface of the second dielectric layer; and a second conductive structure physically and electrically coupled to the first conductive structure, a bottom surface of the second conductive structure being a first distance below the top surface of the second dielectric layer.