Nitridized Interconnect Cavities for Semiconductor Manufacturing
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conductive interconnect structures in semiconductor devices often require excessive processing steps and materials, leading to increased manufacturing time and cost, as well as higher contact resistance due to non-conductive or less conductive materials occupying space within the chip.
Innovation Solution
The method involves patterning cavities in a non-conductive material and treating the surfaces with a nitrogen-containing plasma to form a nitridized interface region, allowing direct deposition of conductive materials without the need for additional barrier or adhesion layers, thereby improving adhesion and reducing resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If traditional damascene or dual damascene processing techniques are used to form interconnect structures, then adhesion between conductive and non-conductive materials is maintained, but the number of processing steps and materials increases, leading to increased manufacturing time and cost
Solution Approach 1:
The patent removes the barrier layer from the traditional damascene process, extracting only the essential adhesion-promoting interface treatment (nitridization) while eliminating unnecessary materials and steps. This reduces processing complexity while maintaining manufacturing feasibility.
Solution Approach 2:
The nitridization treatment is performed in advance on the non-conductive material surface before conductive material deposition. This preliminary surface modification creates an adhesion-promoting interface that eliminates the need for subsequent barrier layers, simplifying the overall manufacturing process.
2Reliability
If barrier layers are used in interconnect structures, then adhesion between conductive and non-conductive materials is improved, but contact resistance increases due to non-conductive or less conductive materials occupying space
Solution Approach 1:
The patent applies nitridization treatment locally at the interface between the non-conductive and conductive materials, creating a localized adhesion-promoting region without introducing extensive barrier layers. This localized treatment maintains low contact resistance while providing sufficient adhesion strength.
Solution Approach 2:
The patent changes the chemical composition and surface properties of the non-conductive material interface through nitridization, transforming it from a non-adhesive surface to an adhesion-promoting surface. This parameter change eliminates the need for barrier layers and reduces contact resistance.
3Stability of the object's composition
If additional barrier and adhesion layers are deposited, then material compatibility and bonding are improved, but the volume of conductive material decreases, slowing circuit speeds
Solution Approach 1:
The patent extracts and eliminates the barrier layer from the multi-layer structure, retaining only the essential adhesion interface through nitridization. This reduces the total thickness of non-conductive materials, increases conductive material volume, and improves circuit speed while maintaining material compatibility.
Solution Approach 2:
The nitridized interface creates a composite structure where the non-conductive material itself provides both structural support and adhesion functionality, eliminating the need for separate barrier and adhesion layers. This composite approach maximizes conductive material volume while ensuring material compatibility.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach simplifies the processing flow, reduces contact resistance, and increases the volume of conductive material, leading to faster circuit speeds and lower manufacturing costs.
Implementation Method 1
treating the surfaces with a nitrogen-containing plasma to form a nitridized interface region
Implementation Method 2
exposing a surface of the cavity in the non-conductive material to a surface nitriding treatment
Data Source
AI summary
A method for forming an interconnect structure in an element is disclosed. The method can include patterning a cavity in a non-conductive material. The method can include exposing a surface of the cavity in the non-conductive material to a surface nitriding treatment. The method can include depositing a conductive material directly onto the treated surface after the exposing.