Nitridized Metal Layer for BARC Removal in Semiconductor Packages
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Solution Overview
Problem
Existing semiconductor packages face challenges in efficiently forming conductive structures due to damage from by-products during the bottom anti-reflection coating (BARC) removal process, which affects the reliability and integrity of the metal features.
Innovation Solution
A method involving the use of nitrogen-containing and oxygen-containing plasmas to effectively remove the BARC material without damaging the underlying metal features, while forming a nitridized metal protection layer to safeguard the metal structures, thereby enhancing the reliability of the semiconductor package.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of substance
If conventional BARC removal process is used, then BARC material is removed, but metal features are damaged by by-products
Solution Approach 1:
The patent converts the harmful oxygen-containing plasma by-products into a beneficial protective layer by introducing a nitrogen-containing plasma treatment step. The nitrogen reacts with the metal surface to form a nitridized metal protection layer, transforming the potentially damaging oxidation process into a protective nitridation process that safeguards the metal features while still enabling effective BARC removal.
Solution Approach 2:
The nitrogen-containing plasma acts as an intermediary between the oxygen-containing plasma removal process and the metal features. By introducing nitrogen as a mediating element, the patent prevents direct contact between the harmful oxygen by-products and the metal surface, allowing BARC removal while protecting the underlying metal through the formation of a nitrogen-based protection layer.
2Ease of manufacture
If BARC removal is performed to enable subsequent processing, then processing can proceed, but metal features suffer damage from by-products
Solution Approach 1:
The patent applies preliminary protection by introducing the nitrogen-containing plasma treatment before subsequent processing steps. This preliminary action of forming the nitridized metal protection layer ensures that the metal features are safeguarded against damage during BARC removal and ready for the next manufacturing steps, thereby maintaining both ease of manufacture and manufacturing precision.
3Productivity
If plasma treatment is used to remove BARC, then BARC material is effectively removed, but metal features are exposed to damaging by-products
Solution Approach 1:
The patent transforms the harmful oxygen-containing plasma by-products into a beneficial protective mechanism by immediately following with nitrogen-containing plasma treatment. The nitrogen reacts with the metal surface to create a protective nitridized layer, converting the potentially damaging oxidation environment into a protective state while maintaining high BARC removal efficiency.
Solution Approach 2:
The nitrogen-containing plasma creates an inert-like protective environment around the metal features during and after BARC removal. This nitrogen-rich atmosphere prevents harmful oxygen by-products from damaging the metal surface, effectively isolating the metal features from harmful factors while maintaining productive BARC removal.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach ensures the reliable removal of BARC material without damaging the metal features, improving the structural integrity and reliability of the semiconductor package by forming a protective nitridized metal layer.
Implementation Method 1
performing at least one nitrogen-containing plasma
Implementation Method 2
forming a nitridized metal protection layer
Implementation Method 3
performing at least one oxygen-containing plasma
Data Source
AI summary
A conductive structure, a semiconductor package and methods of forming the same are disclosed. A conductive structure includes a metal feature, an insulating layer and a nitridized metal layer. The metal feature is disposed over a substrate and includes a lower metal pattern and an upper metal pattern over the lower metal pattern. The insulating layer surrounds the metal feature. The nitridized metal layer is disposed between the lower metal pattern and the upper metal pattern.


