3D Bonded Semiconductor Structure Nitridized Oxide Metal Interfaces
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current 3D integration technologies lack a method to maximize both oxide-oxide and metal-to-metal bonding strength, which is crucial for mechanical integrity and electrical performance in advanced semiconductor structures.
Innovation Solution
A nitride surface treatment process is applied to create nitrided surface layers on both oxide and metallic bonding regions, followed by nitrogen removal from the metallic regions to restore their original composition, allowing for enhanced bonding interfaces between nitridized oxide and metallic structures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If oxide-oxide bonding and metal-to-metal bonding are performed simultaneously in advanced 3D integration, then both dielectric bonding strength and metal contact are improved, but it becomes difficult to maximize the bonding strength of both interfaces at the same time
Solution Approach 1:
The patent applies different surface treatments to different regions: nitridation is applied specifically to the oxide bonding surfaces to enhance bonding strength, while the metal surfaces are kept in their original state or treated differently to optimize metal-to-metal bonding. This localized differentiation allows each interface to be optimized for its specific bonding requirements without compromising the other.
Solution Approach 2:
The patent performs preliminary surface treatments (nitridation for oxide surfaces, and appropriate treatments for metal surfaces) before the actual bonding process. This preliminary preparation ensures that both surfaces are optimally conditioned for bonding, allowing both oxide-oxide and metal-to-metal interfaces to achieve maximum bonding strength simultaneously.
2Ease of manufacture
If conventional oxide-oxide bonding is performed followed by through-silicon-via formation, then the process is simple and well-established, but the mechanical integrity and electrical performance are limited compared to simultaneous oxide-oxide and metal-to-metal bonding
Solution Approach 1:
The patent merges the oxide-oxide bonding process with metal-to-metal bonding into a single simultaneous operation. By aligning and bonding both oxide surfaces and metal surfaces at the same time, the method achieves superior mechanical integrity and electrical performance while maintaining process efficiency through consolidation of steps.
Solution Approach 2:
The patent creates a composite bonded structure that includes both nitridized oxide regions and treated metal regions in close proximity or direct contact. This composite approach allows the structure to benefit from both the enhanced dielectric bonding of nitridized oxide and the optimized metal-to-metal contact, achieving superior overall performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach maximizes the bonding strength for both oxide-oxide and metal-to-metal interfaces, addressing the limitations of existing methods and enhancing the mechanical and electrical performance of 3D bonded semiconductor structures.
Implementation Method 1
a nitridation process is performed to provide a first nitrided surface layer comprising first nitridized oxide regions in an upper portion of the first bonding oxide layer and a first nitridized metallic region in an upper portion of the at least one first metallic bonding structure
Implementation Method 2
Bonding is performed to form a dielectric bonding interface between the nitridized oxide regions present in the first and second structures, and a metallic bonding interface between the first and second metallic bonding structures
Implementation Method 3
metal to metal (e.g., Cu—Cu) bonding are performed simultaneously
Data Source
AI summary
A first semiconductor structure including a first bonding oxide layer having a first metallic bonding structure embedded therein and a second semiconductor structure including a second bonding oxide layer having a second metallic bonding structure embedded therein are provided. A nitride surface treatment process is performed to provide a nitrided surface layer to each structure. Each nitrided surface layer includes nitridized oxide regions located in an upper portion of the bonding oxide layer and nitridized metallic regions located in an upper portion of the metallic bonding structures. The nitrogen within the nitridized metallic regions is then removed to restore the upper portion of the metallic bonding structures to its original composition. Bonding is performed to form a dielectric bonding interface between the nitridized oxide regions present in the first and second structures, and a metallic bonding interface between the first and second metallic bonding structures.