Nitrogen-Bound Compound for Sub-90nm Lithography MEEF
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Solution Overview
Problem
Current radiation-sensitive resin compositions face challenges in achieving superior sensitivity, resolving ability, exposure latitude, and Mask Error Enhancement Factor (MEEF) performance, particularly at sub-90 nm line widths, especially with the miniaturization of resist patterns and the adoption of liquid immersion lithography.
Innovation Solution
A radiation-sensitive resin composition is developed, comprising a compound with a specific structure bound to a nitrogen atom, a resin with an acid-dissociative dissolution-controlling group, and a radiation-sensitive acid generator, which enhances alkali solubility and improves lithographic performance by controlling basicity and suppressing substance transpiration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional radiation-sensitive resin compositions are used, then basic lithographic functions are maintained, but sensitivity, resolving ability, exposure latitude, and MEEF performance are insufficient at sub-90 nm line widths
Solution Approach 1:
The patent modifies the chemical parameters of the resin composition by introducing a compound with a specific group (formula 1) bound to a nitrogen atom, where Y is a monovalent group with 5-20 carbon atoms. This parameter change in molecular structure optimizes the resist's sensitivity, resolving ability, and MEEF performance for sub-90 nm lithography while maintaining process stability through controlled basicity.
Solution Approach 2:
The invention creates a composite radiation-sensitive resin composition containing multiple components: the nitrogen-bound compound (formula 1), a resin with acid-dissociative dissolution-controlling group, and a radiation-sensitive acid generator. This composite structure synergistically improves lithographic performance across multiple parameters including sensitivity, resolving ability, exposure latitude, and MEEF.
2Reliability
If nitrogen-containing compounds are added to improve process stability, then process stability is enhanced, but lithographic performance of independent patterns and compatibility with liquid immersion lithography are insufficient
Solution Approach 1:
The patent optimizes the basicity parameter of nitrogen-containing compounds by controlling the structure of group (1) where Y has 5-20 carbon atoms. This parameter optimization enables the compound to provide process stability through controlled basicity while simultaneously achieving superior lithographic performance and compatibility with liquid immersion lithography processes.
Solution Approach 2:
The invention introduces a compound with specific local chemical structure (group 1 bound to nitrogen) that provides localized basicity control within the resin composition. This local quality adjustment allows the material to maintain process stability while enhancing lithographic performance characteristics that were previously compromised by conventional nitrogen compounds.
3Length of moving object
If miniaturization of resist patterns is pursued to achieve sub-90 nm line widths, then feature size is reduced, but performance requirements such as MEEF reduction and liquid immersion compatibility become more demanding
Solution Approach 1:
The patent modifies the molecular parameters of the radiation-sensitive resin by incorporating a compound where Y is a monovalent group with 5-20 carbon atoms bound to nitrogen. This parameter change optimizes the material's performance characteristics including MEEF reduction and liquid immersion compatibility, enabling successful miniaturization to sub-90 nm line widths while meeting stringent performance requirements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition achieves superior sensitivity, resolving ability, and exposure latitude, along with improved MEEF performance, making it suitable for advanced lithographic applications, including liquid immersion lithography.
Implementation Method 1
Chemically amplified radiation-sensitive resin compositions generate an acid upon irradiation with an electron beam or far ultraviolet ray typified by KrF excimer laser or ArF excimer laser at a light-exposed site
Implementation Method 2
a resin with an acid-dissociative dissolution-controlling group and a property such that alkali solubility of the resin increases an action of an acid
Data Source
AI summary
A radiation-sensitive resin composition includes a compound, a resin and a radiation-sensitive acid generator. The compound has a structure in which a group represented by a following formula (1) is bound to a nitrogen atom. The resin has an acid-dissociative dissolution-controlling group and has a property such that alkali solubility of the resin increases by an action of an acid. In the formula (1), Y is a monovalent group having 5 to 20 carbon atoms, and “*” represents a bonding hand with the nitrogen atom. In the formula (i), R1, R2 and R3 each independently represent a linear or branched alkyl group having 1 to 4 carbon atoms or a monovalent alicyclic hydrocarbon group having 4 to 12 carbon atoms, or R1 and R2 are linked with each other to form a bivalent alicyclic hydrocarbon group, and “*” represents a bonding hand with the oxygen atom.